|
|
Datasheet IRFS730 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IRFS730 | N-CHANNEL MOSFET IRFS730
Rev.D Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package.
特征 / Features
低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching.
用途 / Applications
用于高� | BLUE ROCKET ELECTRONICS | mosfet |
2 | IRFS730 | N-Channel MOSFET STB141NF55 - STB141NF55-1 STP141NF55
N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET™ II Power MOSFET
Features
Type STB141NF55 STB141NF55-1 STP141NF55 VDSS 55V 55V 55V RDS(on) <0.008Ω <0.008Ω <0.008Ω ID (1) 80A 80A 80A
3 1 2
1. Current limited by package
3 1
3 12
Descri | LZG | mosfet |
3 | IRFS730A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS730A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power suppli | Inchange Semiconductor | mosfet |
4 | IRFS730A | Advanced Power MOSFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
IRFS730A
BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A
TO-220F
Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower | Fairchild Semiconductor | mosfet |
5 | IRFS730B | 400V N-Channel MOSFET IRF730B/IRFS730B
November 2001
IRF730B/IRFS730B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-stat | Fairchild | mosfet |
IRF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IRF-182xx | Inductors w w ELECTRICAL SPECIFICATIONS
MATERIAL SPECIFICATIONS
Coating: Epoxy-uniform roll coated. Lead: Tinned copper. Core: Ferrite.
a D . w
ta
Sh
t e e
4U
.c
om
Inductors
Epoxy Conformal Coated Uniform Roll Coated
FEATURES
IRF
Vishay Dale
• Flame-retardant coating and color band identification. Vishay Intertechnology inductor | | |
2 | IRF-46 | Inductors Epoxy Conformal Coated
IRF-46
Vishay Dale
Inductors
Epoxy Conformal Coated, Axial Leaded
FEATURES
• Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies RoHS • Treated with epoxy resin coating for humidity COMPLIANT resi Vishay Siliconix inductor | | |
3 | IRF034 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF034
DESCRIPTION ·Drain Current ID=25A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.05Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power supp Inchange Semiconductor mosfet | | |
4 | IRF034 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) PD - 90585
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF034
IRF034 60V, N-CHANNEL
BVDSS RDS(on) 60V 0.050Ω
ID 25Α
The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transi International Rectifier transistor | | |
5 | IRF044 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF044
DESCRIPTION ·Drain Current ID=44A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.028Ω(Max) ·Simple Drive Requirements
APPLICATIONS ·Switching power sup Inchange Semiconductor mosfet | | |
6 | IRF044 | N-CHANNEL POWER MOSFET IRF044
MECHANICAL DATA Dimensions in mm (inches)
39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 17.15 (0.675) 16.64 (0.655)
N–CHANNEL POWER MOSFET
VDSS ID(cont) RDS(on)
FEATURES
• HERMETICALLY SEALED TO–3 METAL PACKAGE
7.87 (0.310) 6.99 (0.275)
1
20.32 (0.800) 18.80 (0.740) dia. 1.78 (0.07 Seme LAB mosfet | | |
7 | IRF044 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE
PD - 90584
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
Product Summary
Part Number IRF044 BVDSS 60V RDS(on) 0.028 Ω ID 44Α
IRF044 60V, N-CHANNEL
The HEXFET technology is the key to International Rectifier’s advanced line of International Rectifier transistor | |
Esta página es del resultado de búsqueda del IRFS730. Si pulsa el resultado de búsqueda de IRFS730 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |