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PDF FIR8N60FG Data sheet ( Hoja de datos )
| Número de pieza | FIR8N60FG | |
| Descripción | Silicon N-Channel Power MOSFET | |
| Fabricantes | First Semiconductor | |
| Logotipo |  |
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Silicon N-Channel Power MOSFET
VDSS
ID
PD(TC=25℃)
RDS(ON)
600 V
7A
30 W
1.10 Ω
Features
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:21nC)
z Low Reverse transfer capacitances(Typical:15pF)
z 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
FIR8N60FG
PIN Connection TO-220F
G
DS
D
G
S
Marking Diagram
YAWW
FIR8N60F
Y = Year
A = Assembly Location
WW = Work Week
FIR8N60F = Specific Device Code
Absolute（Tc= 25℃ unless otherwise specified）
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
VESD(G-S)
TJ，Tstg
TL
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
@ 2011 Copyright By American First Semiconductor
Rating
600
7
4.5
28
±20
550
54
10.4
5.0
100
0.80
3000
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
℃
℃
Page 1/8
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Electrical Characteristic Curves
Fig. 7 VDSS - TJ
FIR8N60FG
Fig.8 RDS(on) - TJ
Fig. 9 ID - TC
CC
Fig. 10 Safe Operating Area
*
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FIR8N60FG.PDF ] | |
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