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부품번호 | W20NB50 기능 |
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기능 | STW20NB50 | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 8 페이지수
® STW20NB50
N - CHANNEL 500V - 0.22Ω - 20A - TO-247
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STW20NB50
500 V < 0.27 Ω 20 A
s TYPICAL RDS(on) = 0.22 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage technology,
SGS-Thomson has designed an advanced family
of power Mosfets with outstanding performances.
The new patent pending strip layout coupled with
the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching
characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
500 V
500 V
± 30
V
20 A
12.7
A
80 A
250 W
2 W/oC
4
-65 to 150
150
(1) ISD ≤ 20A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/8
Free Datasheet http://www.Datasheet4U.com
STW20NB50
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
Free Datasheet http://www.Datasheet4U.com
4페이지 STW20NB50
DIM.
A
D
E
F
F3
F4
G
H
L
L3
L4
L5
M
Dia
MIN.
4.7
2.2
0.4
1
2
3
15.3
19.7
14.2
2
3.55
TO-247 MECHANICAL DATA
mm
TYP.
10.9
34.6
5.5
MAX.
5.3
2.6
0.8
1.4
2.4
3.4
15.9
20.3
14.8
3
3.65
MIN.
0.185
0.087
0.016
0.039
0.079
0.118
0.602
0.776
0.559
0.079
0.140
inch
TYP.
0.429
0.413
1.362
0.217
MAX.
0.209
0.102
0.031
0.055
0.094
0.134
0.626
0.779
0.582
0.118
0.144
P025P
7/8
Free Datasheet http://www.Datasheet4U.com
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ W20NB50.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
W20NB50 | STW20NB50 | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |