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NE02133 데이터시트 PDF




CEL에서 제조한 전자 부품 NE02133은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 NE02133 자료 제공

부품번호 NE02133 기능
기능 NPN SILICON HIGH FREQUENCY TRANSISTOR
제조업체 CEL
로고 CEL 로고


NE02133 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.



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NE02133 데이터시트, 핀배열, 회로
NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC gold,
platinum, titanium, and platinum-silicide metallization system to
provide the utmost in reliability. NE02107 is available in both
common-base and common-emitter configurations and has
been qualified for high-reliability space applications.
NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 5 mA
500 1.2 18.60
1000
1.5 13.82
1500
2.0 11.83
2000
2.4 9.36
2500
2.6 7.82
3000
3.6 7.51
3500
3.7 6.31
VCE = 10 V, IC = 20 mA
500 1.8 21.32
1000
1.9 16.15
1500
2.4 13.50
2000
2.9 11.02
2500
3.2 9.12
3000
3.9 8.10
3500
4.3 6.48
ΓOPT
MAG ANG
.36 69
.31 124
.50 165
.44 -175
.52 -161
.68 -141
.71 -139
.16 149
.33 169
.46 -179
.53 -167
.57 -154
.62 -139
.67 -134
Rn/50
.14
.12
.05
.06
.10
.14
.21
.15
.13
.09
.08
.14
.27
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500 1.8 17.5
1000
2.1 12.5
1500
2.3 9.5
2000
2.6 7.5
ΓOPT
MAG ANG
0.11 156
0.27 168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
PLEASE NOTE:
The following part numbers from this datasheet are nonpromotive:
NE02100
NE02133
NE02139
The following part numbers from this datasheet are discontinued:
NE02107
NE02135
Please call sales office for details.
California Eastern Laboratories
Free Datasheet http://www.Datasheet4U.com




NE02133 pdf, 반도체, 판매, 대치품
NE021 SERIES
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE02107, NE02135
GAIN vs. FREQUENCY
40
VCE = 10 V
IC = 20 mA
32
24
|S21| 2
16
MAG
8
0
0.1
0.2 0.3
0.5 0.7 1.0
Frequency, f (GHz)
2.0
30
25
20
15
10
5
0
0
NE02107
INSERTION GAIN vs.
COLLECTOR CURRENT
100 MHz
VCE = 10 V
500 MHz
1 GHz
2 GHz
10 20 30 40 50 60
Collector Current, IC (mA)
70
NOISE FIGURE AND ASSOCIATED
GAIN vs. FREQUENCY
5 20
VCE = 10 V
IC = 5 mA
4 GA 16
3 12
NF
28
1
0
0.1
NE02133
NE02100, NE02107, NE02135
4
0.2 0.3 0.5 0.7 1
Frequency, f (GHz)
0
23
NE02133
GAIN vs. FREQUENCY
40
VCE = 10 V
IC = 20mA
32
24
|S21|2
16
8
MAG
0
0.1
0.2 0.3
0.5 0.7 1.0
Frequency, f (GHz)
2.0
NOISE FIGURE vs.
COLLECTOR CURRENT
5
VCE = 10 V
2 GHz
4
3
2
1
0
1
0.5 GHz
NE02133
NE02107, NE02135
23
5 7 10
20 30
Collector Current, IC (mA)
GAIN BANDWIDTH PRODUCT
AND FORWARD CURRENT GAIN
vs. COLLECTOR CURRENT
500 5.0
fT
300 3.0
VCE = 10 V
200 2.0
100
70
50
1
1.0
hFE 0.7
0.5
2 3 5 7 10 20 30 50 70 100
Collector Current, IC (mA)
Free Datasheet http://www.Datasheet4U.com

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NE02133 전자부품, 판매, 대치품
TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)
NE021 SERIES
j25
j10
j50
S11
4 GHz
j100
0 10
25 50 100
S22
4 GHz
-j10
S22
0.1 GHz
S11
0.1 GHz
-j25 -j100
-j50
0
Coordinates in Ohms
Frequency in GHz
(VCE = 10 V, IC = 20 mA)
120˚
S21
0.1 GHz
150˚
90˚
60˚
30˚
180˚
S12
4 GHz
S12
0.1 GHz 0.5 .10 .15 .20 .25 0˚
6 S21
4 GHz
12
-150˚ 18 -30˚
24
-120˚
S21 30
-90˚
-60˚
NE02107
VCE = 10 V, IC = 5 mA
FREQUENCY
S11
S21 S12
S22 K MAG1
(MHz)
MAG ANG
MAG ANG
MAG
ANG
MAG ANG
(dB)
100
500
1000
1500
2000
2500
3000
3500
4000
.82 -36
.70 -125
.68 -161
.68 -178
.68 170
.67 159
.67 151
.68 142
.68 134
13.90
7.38
4.17
2.87
2.18
1.73
1.49
1.27
1.16
157
107
82
66
53
40
28
17
6
.01 73
.07 35
.08 25
.09 24
.10 26
.11 22
.12 23
.13 19
.14 17
.95 -16
.54 -47
.39 -59
.38 -68
.37 -78
.38 -90
.40 -102
.43 -112
.45 -122
0.022
0.345
0.628
0.783
0.928
1.081
1.116
1.119
1.101
31.430
20.230
17.170
15.036
13.385
10.227
8.867
7.802
7.249
VCE = 10 V, IC = 10 mA
100 .69 -54
500 .67 -145
1000
.67 -172
1500
.67 175
2000
.67 165
2500
.67 15
3000
.67 146
3500
.67 137
4000
.67 130
22.57
9.37
5.00
3.40
2.57
2.07
1.80
1.53
1.41
150
100
79
65
53
41
30
20
8
.01 69
.05 36
.06 36
.08 37
.09 40
.11 35
.12 34
.14 30
.15 23
.89 -23
.39 -58
.27 -70
.26 -77
.25 -87
.28 -97
.31 -108
.34 -116
.36 -125
0.085
0.489
0.821
0.907
1.071
1.052
1.074
1.046
1.023
33.535
22.728
19.208
16.284
12.933
11.355
10.096
9.080
8.803
VCE = 10 V, IC = 20 mA
100 .58 -79
500 .67 -161
1000
.67 179
1500
.67 168
2000
.67 159
2500
.67 150
3000
.68 142
3500
.67 134
4000
.68 127
31.63
10.57
5.47
3.70
2.78
2.26
1.96
1.68
1.53
142
95
77
64
53
42
31
21
9
.01 65
.03 45
.04 46
.07 46
.09 48
.11 44
.12 39
.14 36
.16 27
.81 -32
.28 -68
.19 -78
.19 -84
.20 -96
.23 -105
.25 -114
.28 -122
.31 -128
0.170
0.774
1.205
1.041
1.077
1.058
1.063
1.065
0.947
35.001
25.470
18.622
15.998
13.207
11.658
10.601
9.238
9.806
VCE = 10 V, IC = 30 mA
100 .55 -96
500 .67 -167
1000
.68 176
1500
.68 166
2000
.68 158
2500
.68 148
3000
.68 141
3500
.68 133
4000
.68 126
35.99
10.79
5.52
3.75
2.81
2.26
1.96
1.66
1.51
137
93
75
63
52
41
30
20
9
.01 63
.02 48
.04 53
.07 52
.09 53
.11 46
.13 42
.14 38
.16 29
.75 -37
.24 -69
.17 -77
.17 -83
.18 -96
.21 -106
.24 -115
.27 -123
.30 -131
0.236
1.157
1.192
1.028
1.065
1.057
1.008
1.066
0.984
35.562
24.914
18.752
16.271
13.383
11.669
11.227
9.175
9.749
Note:
1. Gain Calculations:
( ).MAG = |S21| K ± K 2 - 1 When K 1, MAG is undefined and MSG values are used. MSG = |S21| , K = 1 + | | 2 - |S11| 2 - |S22| 2 , = S11 S22 - S21 S12
|S12|
|S12|
2 |S12 S21|
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관련 데이터시트

부품번호상세설명 및 기능제조사
NE02132

NPN Silicon High Frequency Transistor

NEC
NEC
NE02133

NPN SILICON HIGH FREQUENCY TRANSISTOR

CEL
CEL

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