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IRF1010 데이터시트 PDF




nELL에서 제조한 전자 부품 IRF1010은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRF1010 자료 제공

부품번호 IRF1010 기능
기능 N-Channel Power MOSFET / Transistor
제조업체 nELL
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IRF1010 데이터시트, 핀배열, 회로
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(84A, 60Volts)
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
FEATURES
RDS(ON) = 8.5mΩ @ VGS = 10V
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(CRSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
175°C operation temperature
D
GDS
TO-220AB
(IRF1010A)
D
G
D
S
TO-263(D2PAK)
(IRF1010H)
D (Drain)
PRODUCT SUMMARY
ID (A)
ID (A), Package Limited
VDSS (V)
RDS(ON) (mΩ)
QG(nC) max.
84
75
60
8.5 @ VGS = 10V
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VALUE
UNIT
VDSS
VDGR
VGS
Drain to Source voltage
Drain to Gate voltage
Gate to Source voltage
TJ=25°C to 150°C
RGS=20KΩ
60
60 V
±20
ID Continuous Drain Current (Note 1)
IDM Pulsed Drain current(Note 2)
VGS=10V, TC=25°C
VGS=10V, TC=100°C
84
60
A
340
IAR
EAR
EAS
dv/dt
Avalanche current(Note 2)
Repetitive avalanche energy(Note 2)
Single pulse avalanche energy(Note 3)
Peak diode recovery dv/dt(Note 4)
See fig.12,16,17
L=0.077mH, IAS=51A
51
mJ
99
5 V /ns
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
140
0.90
W
W /°C
TJ Operation junction temperature
-55 to 175
TSTG
Storage temperature
-55 to 175
ºC
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
300
Mounting torque, #6-32 or M3 screw
10 (1.1)
Note: 1.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
2.Repetitive rating: pulse width limited by junction temperature.
3.L=0.077mH, IAS51A, RG=25, starting TJ=25˚C
4.ISD ≤ 51A, di/dt ≤ 260A/µs, VDD V(BR)DSS, TJ ≤ 175°C.
www.nellsemi.com
Page 1 of 7
lbf.in (N.m)




IRF1010 pdf, 반도체, 판매, 대치품
SEMICONDUCTOR
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
100000
10000
VGS = 0V, f =1MHZ
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1000
0
1
Ciss
Coss
Crss
10 100
Drain-to-Source voltage, VDS (V)
IRF1010 Series RRooHHSS
Nell High Power Products
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
12
lD = 51A
10
8
VDS = 48V
VDS = 30V
VDS = 12V
6
4
2
0
0 10 20 30 40 50 60
Total gate charge, QG (nC)
Fig.7 Typical Source-Drain diode forward
voltage
1000
100
10
TJ = 17 5°C
TJ = 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1
VGS = 0V
1.2 1.4 1.6 1.8
2
Source-to-Drain voltage, VSD (V)
Fig.8 Maximum safe operating area
10000
1000 Operation in This Area is Limited by RDS(ON)
100
10
100µs
1ms
1
0.1
1
Note:
1. TC = 25°C
2. TJ = 175°C
3. Single Pulse
10ms
10
100
Drain-to-Source voltage, VDS (V)
Fig.9 Normalized on-resistance vs.
temperature
2.5
lD =84A
2
1.5
1
VGS=10V
0.5
-20 -40 -60 0 20 40 60 80 100 120140160 180
Junction temperature, TJ (°C)
www.nellsemi.com
Page 4 of 7

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IRF1010 전자부품, 판매, 대치품
SEMICONDUCTOR
IRF1010 Series RRooHHSS
Nell High Power Products
Fig.18 Maximum drain current vs.
Case temperature
120
100 LIMITED BY PACKAGE
80
60
40
20
0
25
50 75 100 125 150 175
Case temperature, TC (°C)
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
3.91 (0.154)
3.74 (0.148)
2.87 (0.113)
2.62 (0.103)
4.06 (0.160)
3.56 (0.140)
PIN
123
16.13 (0.635)
15.87 (0.625)
3.68 (0.145)
3.43 (0.135)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
14.22 (0.560)
13.46 (0.530)
0.56 (0.022)
0.36 (0.014)
4.70 (0.185)
4.44 (0.1754)
1.39 (0.055)
1.14 (0.045)
15.32 (0.603)
14.55 (0.573)
2.79 (0.110)
2.54 (0.100)
TO-263(D2PAK)
10.45 (0.411)
9.65 (0.380)
6.22 (0.245)
4.83 (0.190)
4.06 (0.160)
9.14 (0.360)
8.13 (0.320)
0.940 (0.037)
0.686 (0.027)
2.67 (0.105)
2.41 (0.095)
15.85 (0.624)
15.00 (0.591)
5.20 (0.205)
4.95 (0.195)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.53 (0.021)
0.36 (0.014)
3.56 (0.140)
2.79 (0.110)
www.nellsemi.com
All dimensions in millimeters(inches)
Page 7 of 7
D (Drain)
G
(Gate)
S (Source)

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