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Número de pieza | MMBTJ177 | |
Descripción | (MMBTJ175 - MMBTJ177) P-Channel Switch | |
Fabricantes | Discrete POWER & Signal Technologies | |
Logotipo | ||
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Discrete POWER & Signal
Technologies
J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
G
SD
TO-92
G
SOT-23
S
Mark: 6W / 6X / 6Y
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabalized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
- 30
30
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES :
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J174 - J177
350
2.8
125
*MMBFJ175
225
1.8
357 556
Units
V
V
mA
°C
Units
mW
mW/°C
°C/W
°C/W
Free Datasheet http://www.Datasheet4U.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MMBTJ177.PDF ] |
Número de pieza | Descripción | Fabricantes |
MMBTJ175 | (MMBTJ175 - MMBTJ177) P-Channel Switch | Discrete POWER & Signal Technologies |
MMBTJ175 | (MMBTJ175 - MMBTJ177) P-Channel Switch | Fairchild Semiconductor |
MMBTJ176 | (MMBTJ175 - MMBTJ177) P-Channel Switch | Discrete POWER & Signal Technologies |
MMBTJ176 | (MMBTJ175 - MMBTJ177) P-Channel Switch | Fairchild Semiconductor |
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