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PDF 12N80 Data sheet ( Hoja de datos )

Número de pieza 12N80
Descripción 800V N-CHANNEL POWER MOSFET
Fabricantes Unisonic Technologies 
Logotipo Unisonic Technologies Logotipo



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No Preview Available ! 12N80 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
12N80
Preliminary
12A, 800V N-CHANNEL
POWER MOSFET
1
„ DESCRIPTION
The UTC 12N80 is an N-channel enhancement mode power
MOSFET using UTC’s advanced technology to provide customers with
planar stripe and DMOS technology. This technology is specialized in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the avalanche
and commutation mode.
The UTC 12N80 is universally applied in high efficiency switch
mode power supply.
1
Power MOSFET
TO-220
TO-220F1
„ FEATURES
* RDS(on) = 0.9@VGS = 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
„ SYMBOL
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N80L-TA3-T
12N80G-TA3-T
12N80L-TF1-T
12N80G-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-594.b
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12N80 pdf
12N80
Preliminary
„ TEST CIRCUITS AND WAVEFORMS(Cont.)
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Peak Diode Recovery dv/dt Test Circuit & Waveforms
VDD
(DVrGivSer
)
ISD
(DUT)
VDS
(DUT)
D=
Gate Pulse
Gate Pulse
Width
Period
10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-594.b
Free Datasheet http://www.Datasheet4U.com

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