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부품번호 | VB40100C 기능 |
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기능 | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | ||
제조업체 | Vishay | ||
로고 | |||
전체 5 페이지수
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.375 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VTS40100CT
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF40100C
3
2
1
PIN 1
PIN 2
PIN 3
TO-262AA
K
2
1
VB40100C
PIN 1
K
PIN 2
HEATSINK
VI40100C
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
Tj max.
2 x 20 A
100 V
250 A
0.61 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 seconds (for TO-220AB,
ITO-220AB & TO-262AA package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL VTS40100CT VF40100C VB40100C VI40100C
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(see Fig. 1)
per device
per diode
VRRM
IF(AV)
100
40
20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
250
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 minute
VAC
1500
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
UNIT
V
A
A
V
°C
Document Number: 88926
Revision: 02-Aug-07
www.vishay.com
1
Free Datasheet http://www.Datasheet4U.com
New Product
VTS40100CT, VF40100C, VB40100C & VI40100C
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° Ref.
0.404 (10.26)
0.384 (9.75)
0.076 Ref.
(1.93) Ref.
ITO-220AB
See note
See note
0.076 Ref.
7° Ref.
(1.93)Ref. 0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) D
0.122 (3.08) D
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
1 23
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
1 23
0.671 (17.04)
0.651 (16.54)
7° Ref.
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.080 (2.03)
0.065 (1.65)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
7° Ref.
0.110 (2.79)
0.100 (2.54)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note: Copper exposure is allowable for 0.005 (0.13) Max. from the body
30° (Typ)
(REF)
0.411 (10.45)
Max.
0.250 (6.35)
Min.
K
TO-262AA
0.055 (1.40)
0.047 (1.19)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
123
0.510 (12.95)
0.470 (11.94)
0.350 (8.89)
0.330 (8.38)
PIN 1
PIN 3
0.560 (14.22)
0.530 (13.46)
PIN 2
HEATSINK
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
0.41 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42
(10.66)
MIN.
0.33
(8.38)
MIN.
0.670 (17.02)
0.591 (15.00)
0.08
(2.032)
MIN.
0.105 (2.67)
(0.095) (2.41)
0.15
(3.81) MIN.
www.vishay.com
4
Document Number: 88926
Revision: 02-Aug-07
Free Datasheet http://www.Datasheet4U.com
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부품번호 | 상세설명 및 기능 | 제조사 |
VB40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay Siliconix |
VB40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |