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BTA30-600CW3G 데이터시트 PDF




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부품번호 BTA30-600CW3G 기능
기능 Silicon Bidirectional Thyristors
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BTA30-600CW3G 데이터시트, 핀배열, 회로
BTA30-600CW3G,
BTA30-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
Blocking Voltage to 800 Volts
On-State Current Rating of 30 Amperes RMS at 95°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt 500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package Internally Isolated
High Commutating dI/dt 4.0 A/ms minimum at 125°C
Internally Isolated (2500 VRMS)
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (Note 1)
(TJ = 40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30600CW3G
BTA30800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
30
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ(initial) = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
400 A
667 A2sec
NonRepetitive Surge Peak OffState
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDRM/VRRM
+100
V
Peak Gate Current (TJ = 125°C, t 20 ms) IGM 4.0 A
Average Gate Power (TJ = 125°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ 40 to +125 °C
Storage Temperature Range
Tstg 40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
TO220AB
CASE 221A
STYLE 12
BTA30xCWG
AYWW
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA30600CW3G
Package
TO220AB
(PbFree)
Shipping
50 Units / Rail
BTA30800CW3G TO220AB 50 Units / Rail
(PbFree)
© Semiconductor Components Industries, LLC, 2010
October, 2010 Rev. 1
*For additional information on our PbFree strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1 Publication Order Number:
BTA30600CW3/D
Free Datasheet http://www.Datasheet4U.com




BTA30-600CW3G pdf, 반도체, 판매, 대치품
125
120
115
110
105
100
95
90
85
80
0
BTA30600CW3G, BTA30800CW3G
5 10 15 20 25
IT(RMS), RMS ON-STATE CURRENT (A)
Figure 1. RMS Current Derating
30
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25
IT(RMS), ON-STATE CURRENT (A)
Figure 2. On-State Power Dissipation
30
1000
1
0.1
100
0.01
0.1
1 10 100 1000
t, TIME (ms)
Figure 4. Thermal Response
1 · 104
10
TJ = 125°C
1
TJ = 25°C
0.1
0
0.5 1.0 1.5 2.0 2.5 3.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 3. On-State Typical Characteristics
35
30
25
MT2 NEGATIVE
20
15
MT2 POSITIVE
10
5
0
40 25 10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Holding Current Variation
http://onsemi.com
4
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부품번호상세설명 및 기능제조사
BTA30-600CW3G

Silicon Bidirectional Thyristors

ON Semiconductor
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