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Número de pieza | BTA30-800CW3G | |
Descripción | Silicon Bidirectional Thyristors | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BTA30-600CW3G,
BTA30-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 Volts
• On-State Current Rating of 30 Amperes RMS at 95°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 500 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package − Internally Isolated
• High Commutating dI/dt − 4.0 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS)
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA30−600CW3G
BTA30−800CW3G
VDRM,
VRRM
600
800
V
On-State RMS Current (Full Cycle Sine
Wave, 60 Hz, TC = 95°C)
IT(RMS)
30
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ(initial) = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
400 A
667 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/
VRSM
VDRM/VRRM
+100
V
Peak Gate Current (TJ = 125°C, t ≤ 20 ms) IGM 4.0 A
Average Gate Power (TJ = 125°C)
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
30 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4 MARKING
DIAGRAM
123
TO−220AB
CASE 221A
STYLE 12
BTA30−xCWG
AYWW
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 No Connection
ORDERING INFORMATION
Device
BTA30−600CW3G
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
BTA30−800CW3G TO−220AB 50 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 1
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1 Publication Order Number:
BTA30−600CW3/D
Free Datasheet http://www.Datasheet4U.com
1 page BTA30−600CW3G, BTA30−800CW3G
25
20
Q3
15 Q1
Q2
10
VD = 12 V
RI = 30 W
5
0
−40 −25 −10 5 20 35 50 65 80 95
TJ, JUNCTION TEMPERATURE (°C)
110 125
Figure 6. Gate Trigger Current Variation
1.3
1.1
VD = 12 V
Q1 RI = 30 W
0.9 Q3
0.7
Q2
0.5
0.3
0.1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
5000
VD = 800 Vpk
4K TJ = 125°C
3K
2K
1K
0
10 100 1000 10000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
80
70
60 Q2
Q1
50
Q3
40
VD = 12 V
RI = 30 W
30
20
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Latching Current Variation
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
CHARGE
CHARGE
CONTROL
NON‐POLAR
CL
LL
MEASURE
I
MT2
1N914 51 W
G
MT1
1N4007
-
200 V
+
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
http://onsemi.com
5
Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BTA30-800CW3G.PDF ] |
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