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PDF FGD4536 Data sheet ( Hoja de datos )
| Número de pieza | FGD4536 | |
| Descripción | 360 V PDP Trench IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGD4536
360 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.59 V @ IC = 50 A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• PDP TV, Consumer Appliances
September 2013
General Description
Using novel trench IGBT technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for consumer
appliances and PDP TV applications where low conduction and
switching losses are essential.
C
G
E
TO-252/D-PAK
Absolute Maximum Ratings
Symbol
VCES
VGES
IC pulse(1)*
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Pulsed Collector Current
@ TC = 25oC
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RJC(IGBT)
RJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Notes:
(1) Half Sine Wave, D < 0.01, pluse width < 1sec
* Ic_pluse limited by max Tj
Ratings
360
30
220
125
50
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
1.0
62.5
Unit
V
V
A
W
W
oC
oC
oC
Unit
oC/W
oC/W
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics
©2011 Fairchild Semiconductor Corporation
FGD4536 Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FGD4536.PDF ] | |
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