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부품번호 | DMG4413LSS 기능 |
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기능 | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 5 페이지수
DMG4413LSS
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-30V
RDS(ON) max
7.5mΩ @ VGS = -10V
10.2mΩ @ VGS = -4.5V
ID max
TA = +25°C
-12A
-10A
Description
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram below
Terminals: Finish Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
SO-8
Top View
SD
SD
SD
GD
Top View
Pin-out
D
G
S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMG4413LSS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
85
P4413LS
YY WW
14
Chengdu A/T Site
85
P4413LS
YY WW
14
Shanghai A/T Site
= Manufacturer’s Marking
P4413LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
http://www.Datasheet4U.com
3.0
2.7
2.4
ID = -1mA
2.1
1.8 ID = -250µA
1.5
1.2
0.9
0.6
0.3
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
f = 1MHz
Ciss
1,000
Coss
Crss
DMG4413LSS
20
18
16
14
12 TA = 25°C
10
8
6
4
2
0
0.2 0.4 0.6 0.8 1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100
0
5 10 15 20 25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
DMG4413LSS
Document number: DS31754 Rev. 5 - 2
4 of 5
www.diodes.com
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
0
8
All Dimensions in mm
September 2013
© Diodes Incorporated
http://www.Datasheet4U.com
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부품번호 | 상세설명 및 기능 | 제조사 |
DMG4413LSS | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |