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부품번호 | MX25L25835E 기능 |
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기능 | FLASH MEMORY | ||
제조업체 | MACRONIX | ||
로고 | |||
전체 30 페이지수
MX25L25835E
MX25L25835E
HIGH PERFORMANCE
SERIAL FLASH SPECIFICATION
P/N: PM1737
REV. 1.0, NOV. 29, 2011
1
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MX25L25835E
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
111FEATURES
GENERAL
Stacked By Two 128Mb Flash Memories With 2 CS#
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four I/O
mode) structure per 128Mb Flash memory
• 4096 Equal Sectors with 4K bytes each (per 128Mb Flash memory)
- Any Sector can be erased individually
• 512 Equal Blocks with 32K bytes each (per 128Mb Flash memory)
- Any Block can be erased individually
• 256 Equal Blocks with 64K bytes each (per 128Mb Flash memory)
- Any Block can be erased individually
• Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
VCC = 2.7~3.6V
- Normal read
- 50MHz
- Fast read
- 1 I/O: 104MHz with 8 dummy cycles
- 2 I/O: 70MHz with 4 dummy cycles for 2READ instruction; 70MHz with 8 dummy cycles for DREAD
instruction
- 4 I/O: 70MHz with 6 dummy cycles for 4READ instruction; 70MHz with 8 dummy cycles for QREAD
instruction
- Fast program time: 1.4ms(typ.) and 5ms(max.)/page (256-byte per page)
- Byte program time: 12us (typical)
- 8/16/32/64 byte Wrap-Around Burst Read Mode
- Continuously Program mode (automatically increase address under word program mode)
- Fast erase time: 60ms (typ.)/sector (4K-byte per sector) ; 0.7s(typ.) /block (64K-byte per block); 80s(typ.) /
chip
• Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 200uA (max.)
- Deep power down current: 80uA (max.)
• Typical 100,000 erase/program cycles
• 20 years data retention
P/N: PM1737
REV. 1.0, NOV. 29, 2011
4
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4페이지 333PIN CONFIGURATION
16-PIN SOP (300mil)
HOLD#/SIO3
VCC
RESET#
NC
NC
CS#2
CS#1
SO/SIO1
1
2
3
4
5
6
7
8
16 SCLK
15 SI/SIO0
14 NC
13 NC
12 NC
11 NC
10 GND
9 WP#/SIO2
MX25L25835E
444PIN DESCRIPTION
SYMBOL
CS#1
CS#2
DESCRIPTION
Chip Select for First 128Mb Flash
memory
Chip Select for Second 128Mb Flash
memory
SI/SIO0
Serial Data Input (for 1xI/O)/ Serial Data
Input & Output (for 2xI/O or 4xI/O mode)
SO/SIO1
SCLK
Serial Data Output (for 1xI/O)/Serial
Data Input & Output (for 2xI/O or 4xI/O
mode)
Clock Input
Write protection: connect to GND or
WP#/SIO2 Serial Data Input & Output (for 4xI/O
mode)
HOLD#/
SIO3
To pause the device without deselecting
the device or Serial data Input/Output for
4 x I/O mode
RESET# Hardware Reset Pin
VCC + 3.3V Power Supply
GND Ground
NC No Connection
Notes:
1. It is not allowed to enable both CS#1 and CS#2 at
the same time.
2. The HOLD# and RESET# pins are internal pull high.
P/N: PM1737
REV. 1.0, NOV. 29, 2011
7
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7페이지 | |||
구 성 | 총 30 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
MX25L25835E | FLASH MEMORY | MACRONIX |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |