|
|
|
부품번호 | MX25U5121E 기능 |
|
|
기능 | FLASH MEMORY | ||
제조업체 | MACRONIX | ||
로고 | |||
전체 30 페이지수
ADVANCED INFORMATION
MX25U5121E
MX25U1001E
MX25U5121E, MX25U1001E
DATASHEET
P/N: PM1980
REV. 0.00, OCT. 11, 2013
1
http://www.Datasheet4U.com
ADVANCED INFORMATION
MX25U5121E
MX25U1001E
512K-BIT [x 1/x 4] CMOS MXSMIO SERIAL FLASH MEMORY
1M-BIT [x 1/x 4] CMOS MXSMIO SERIAL FLASH MEMORY
1. FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
• 512Kb: 524,288 x 1 bit structure or 131,072 x 4 bit structure
1Mb: 1,048,576 x 1 bit structure or 262,144 x 4 bit structure
• 16 Equal Sectors with 4K bytes each (512Kb)
32 Equal Sectors with 4K bytes each (1Mb)
- Any Sector can be erased individually
• 1 Equal Blocks with 64K bytes each (512Kb)
2 Equal Blocks with 64K bytes each (1Mb)
- Any Block can be erased individually
• Program Capability
- Byte base
- Page base (32 bytes)
• Single Power Supply Operation
- 1.65 to 2.0 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• Performance
- Normal Read:
- 30MHz
- Fast Read:
- 1 I/O: 70MHz with 8 dummy cycles
- 2 I/O: 70MHz with 8 dummy cycles, equivalent to 140MHz
- 4 I/O: 60MHz with 6 dummy cycles, equivalent to 240MHz
- Fast program time: 360us(typ.) and 1.3ms(max.)/page
- Fast erase time: 120ms (typ.)/sector ; 1.3sec (typ.)/block
• Low Power Consumption
- Low active read current: 5mA(max.) at 30MHz, 10mA(max.) at 70MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 25uA (typ.)
- Deep power down current: 3uA (typ.)
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Block Lock protection
- The BP0~BP1 status bits defines the size of the area to be software protected against Program and Erase
instructions
• Auto Erase and Auto Program Algorithm
- Automatically erases and verifies data at selected sector
- Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
P/N: PM1980
REV. 0.00, OCT. 11, 2013
4
http://www.Datasheet4U.com
4페이지 5. BLOCK DIAGRAM
Address
Generator
ADVANCED INFORMATION
MX25U5121E
MX25U1001E
Memory Array
SI/SIO0
CS#
WP#/SIO2
HOLD#/SIO3
SCLK
SO/SIO1
Page Buffer
Data
Register
SRAM
Buffer
Mode
Logic
State
Machine
Y-Decoder
HV
Generator
Sense
Amplifier
Clock Generator
Output
Buffer
P/N: PM1980
REV. 0.00, OCT. 11, 2013
7
http://www.Datasheet4U.com
7페이지 | |||
구 성 | 총 30 페이지수 | ||
다운로드 | [ MX25U5121E.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MX25U5121E | FLASH MEMORY | MACRONIX |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |