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STPS1H100MF 데이터시트 PDF




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광범위하게 사용되는 반도체 소자입니다.


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부품번호 STPS1H100MF 기능
기능 High voltage power Schottky rectifier
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STPS1H100MF 데이터시트, 핀배열, 회로
STPS1H100MF
High voltage power Schottky rectifier
Features
Negligible switching losses
High junction temperature capability
Low leakage current
Good trade-off between leakage current and
forward voltage drop
Avalanche capability specified
Description
Schottky rectifier designed for high frequency
miniature switch mode power supplies such as
adaptors and on-board DC/DC convertors. This
device is packaged in STmite flat.
A
K
STmite flat
(DO222-AA)
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF (max)
1A
100 V
175 °C
0.62 V
May 2008
Rev 1
1/7
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STPS1H100MF pdf, 반도체, 판매, 대치품
Characteristics
STPS1H100MF
Figure 7.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (epoxy
printed circuit board, copper
thickness = 35 µm, recommended
pad layout)
Figure 8.
Thermal resistance, junction to
ambient, versus copper surface
under each lead (epoxy
printed board FR4,
copper thickness = 35 µm)
1.0 Zth(j-a)/Rth(j-a)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 Single pulse
0.0
1.E-02
1.E-01
1.E+00
tp(s)
1.E+01
1.E+02
1.E+03
250 Rth(j-a) (°C/W)
225
200
175
150
125
100
75
50
25 SCU(cm2)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Figure 9. Reverse leakage current versus
voltage applied (typical values)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values)
1.E+04 IR(µA)
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
0
20
Tj=150 °C
Tj=125 °C
Tj=100 °C
Tj=75 °C
Tj=50 °C
Tj=25 °C
VR(V)
40 60 80
100
C(pF)
100
10
1
F=1 MHz
VOSC=30 mVRMS
Tj=25 °C
VR(V)
10
100
4/7
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STPS1H100MF 전자부품, 판매, 대치품
STPS1H100MF
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부품번호상세설명 및 기능제조사
STPS1H100MF

High voltage power Schottky rectifier

STMicroelectronics
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