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IRF6775MTRPbF 데이터시트 PDF




IRF에서 제조한 전자 부품 IRF6775MTRPbF은 전자 산업 및 응용 분야에서
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부품번호 IRF6775MTRPbF 기능
기능 DIGITAL AUDIO MOSFET
제조업체 IRF
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IRF6775MTRPbF 데이터시트, 핀배열, 회로
DIGITAL AUDIO MOSFET
IRF6775MTRPbF
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower EMI
Can deliver up to 250W per channel into 4Ω Load in
Key Parameters
VDS 150
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) max.
47
25.0
3.0
V
m:
nC
Half-Bridge Configuration Amplifier
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
&)
5
&
5
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SQ SX ST SH MQ MX MT MN MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TC = 25°C
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
ePower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy
ÙAvalanche Current
eLinear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
ekJunction-to-Ambient
hkJunction-to-Ambient
ikJunction-to-Ambient
jkJunction-to-Case
Junction-to-PCB Mounted
Notes  through ‰ are on page 2
Max.
150
± 20
28
4.9
3.9
39
89
2.8
1.8
33
5.6
0.022
-40 to + 150
Typ.
–––
12.5
20
–––
1.4
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 26, 2014
http://www.Datasheet4U.com




IRF6775MTRPbF pdf, 반도체, 판매, 대치품
IRF6775MTRPbF
100 100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
10 10
TJ = 150°C
1 TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
30
25
20
DC
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5.0
4.5 ID = 100μA
ID = 250μA
4.0
15 3.5
10 3.0
5 2.5
0
25 50 75 100 125 150
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
100
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R1
Ci= τi/Ri
Ci= τi/Ri
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R 4R4
τ4 τ4
τA τA
Ri (°C/W)
1.2801
8.7256
21.750
τi (sec)
0.000322
0.164798
2.25760
13.251 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1 10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ƒ
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 26, 2014
http://www.Datasheet4U.com

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IRF6775MTRPbF 전자부품, 판매, 대치품
IRF6775MTRPbF
DirectFETSubstrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding PCB assembly using DirectFET. This
includes all recommendations for stencil and substrate designs.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
February 26, 2014
http://www.Datasheet4U.com

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IRF6775MTRPbF

DIGITAL AUDIO MOSFET

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