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부품번호 | BD9E151NUX 기능 |
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기능 | 1ch Step-Down Switching Regulator | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 22 페이지수
Datasheet
6.0V~28V, 1.2A 1ch
1ch Step-Down Switching Regulator
BD9E151NUX
General Description
The BD9E151NUX is a 28V, 1.2A diode-rectification
buck converter that integrated internal high-side 30V
Power MOSFET. To increase efficiency at light loads, a
pulse skipping is automatically activated. Furthermore,
the 0uA shutdown supply current allows the device to be
used in battery powered application. Current mode
control with internal slope compensation simplifies the
external component count while allowing the use of
ceramic output capacitors.
Key Specifications
■ Input Voltage
■ Ref. Precision (Ta=25℃)
■ Max Output Current
■ Operating Temperature
■ Operating Junction Temperature
6~28 [V]
±1.0[%]
1.2 [A] (Max.)
-40℃~85℃
-55℃~125℃
Packages
VSON008X2030
2.00mm x3.00mm x 0.60mm
Features
■ High and Wide Input Range (VIN=6V~28V)
■ 30V/80mΩ Internal Power MOSFET
■ 600kHz Fixed Operating Frequency
■ Feedback Pin Voltage 1.0V±1.0%
■ Internal Over Current Protection(OCP), Under
Voltage Locked Out(UVLO), Over Voltage
Protection(OVP), Thermal Shut down(TSD)
■ 0μA Low Shutdown Supply Current
■ VSON008X2030 package
Typical Application Circuits
VSON008X2030
Applications
■ Surveillance Camera Applications
■ OA Applications
■ 12V, 24V Distributed Power Systems
Figure 1. Typical Application Circuit
○Structure:Silicon Monolithic Integrated Circuit ○This product is not designed for normal operation within a radioactive
○Product structure:Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has not designed protection against radioactive rays
1/19
TSZ02210-0Q3Q0AZ00160-1-2
2013.07.17 Rev.001
http://www.Datasheet4U.com
BD9E151NUX
Datasheet
Absolute Maximum Ratings
Item
Symbol
Ratings
Unit
VIN to GND
VIN
30
V
BST to GND
VBST
37
V
BST to LX
⊿VBST
7
V
EN to GND
VEN
30
V
LX to GND
VLX
30
V
FB to GND
VFB
7
V
VC to GND
VSS
7
V
SS to GND
VSS
7
V
High-side FET Drain Current
IDH
1.6
A
Power Dissipation
Pd
2(*1)
W
Operating Temperature
Topr
-40~+85
℃
Storage Temperature
Tstg
-55~+125
℃
Junction Temperature
Tjmax
150
℃
(*1)During mounting of 70×70×1.6t mm 4layer board.Reduce by 20mW for every 1℃ increase. (Above 25℃)
Operating Ratings
Item
Input Voltage
Symbol
VIN
Min
6
Output Voltage
VOUT
1.0(*2)
Output Current
IOUT
(*2)Restricted by minimum on pulse typ. 100nsec
-
Ratings
Typ
-
-
-
Max
28
VINx0.7
or
VIN-5
1.2
Unit
V
V
A
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved
TSZ22111・15・001
4/19
TSZ02210-0Q3Q0AZ00160-1-2
2013.07.17 Rev.001
http://www.Datasheet4U.com
4페이지 BD9E151NUX
Datasheet
1.010
1.008
1.006
1.004
1.002
1.000
0.998
0.996
0.994
0.992
0.990
-40 -15 10 35 60 85
Ta [°C]
Figure 10. FB Pin Reference Voltage - Temperature
60.0
40.0
20.0
0.0
-20.0
Temp=-40℃
Temp=25℃
Temp=85℃
-40.0
T=-60°C
T=25°C
T=105°C
T=150°C
-60.0
0
0.4 0.8 1.2 1.6
VFB [V]
2
Figure 11. FB Pin Voltage – VC Pin Current
4.0 125.0
3.2 110.0
2.4 95.0
1.6 80.0
0.8 65.0
0.0
-40 -15 10 35 60 85
Ta [°C]
Figure 12. SS Pin Charge Current - Temperature
50.0
-40 -15 10 35 60 85
Ta [°C]
Figure 13. High-side FET Ron - Temperature
4.0
3.2
2.4
1.6
0.8
0.0
-40 -15 10 35 60 85
Ta [°C]
Figure 14. OCP Detect Current - Temperature
1.5
1.4
1.3
1.2
1.1
1.0
-40
VCC=12V
VCC=18V
VCC=24V
-15 10 35
Ta [°C]
VCC=6V
VCC=12V
VCC=18V
VCC-24V
VCC=30V
60 85
Figure 15. EN Threshold Voltage - Temperature
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved
TSZ22111・15・001
7/19
TSZ02210-0Q3Q0AZ00160-1-2
2013.07.17 Rev.001
http://www.Datasheet4U.com
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부품번호 | 상세설명 및 기능 | 제조사 |
BD9E151NUX | 1ch Step-Down Switching Regulator | ROHM Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |