Datasheet.kr   

20NK50Z PDF 데이터시트 ( Data , Function )

부품번호 20NK50Z 기능
기능 STFI20NK50Z
제조업체 STMicroelectronics
로고 STMicroelectronics 로고 



전체 13 페이지
		

No Preview Available !

20NK50Z 데이터시트, 핀배열, 회로
STFI20NK50Z
N-channel 500 V, 0.23 Ω, 17 A Zener-protected SuperMESH™
Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Type
VDSS
STFI20NK50Z 500 V
RDS(on)
max
< 0.27 Ω
ID
17 A
PTOT
40 W
Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Applications
Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
1
2
3
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
STFI20NK50Z
20NK50Z
Package
I2PAKFP
(TO-281)
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 019007 Rev 3
1/13
www.st.com
13
http://www.Datasheet4U.com




20NK50Z pdf, 반도체, 판매, 대치품
Electrical characteristics
2 Electrical characteristics
STFI20NK50Z
(TCASE = 25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Drain-source
V(BR)DSS breakdown voltage
(VGS = 0)
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
Gate-body leakage
current (VDS = 0)
VGS(th) Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID =1 mA
VDS = 500 V
VDS = 500 V, TC = 125 °C
VGS = ± 20 V
VDS = VGS, ID = 100 µA
VGS = 10 V, ID = 8.5 A
Min. Typ. Max. Unit
500 V
1 µA
50 µA
± 10 µA
3 3.75 4.5 V
0.23 0.27 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS = 15 V, ID = 8.5 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
VDS = 25 V, f = 1 MHz,
Reverse transfer capacitance VGS = 0
Coss eq. (2)
Equivalent output
capacitance
VDS =0, VDS = 0 to 640 V
- 13
2600
- 328
72
- 187
S
pF
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 250 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
28
20
-
70
15
ns
ns
ns
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 400 V, ID = 17 A,
VGS = 10 V
(see Figure 16)
85 119 nC
- 15.5
nC
42 nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
4/13 Doc ID 019007 Rev 3
http://www.Datasheet4U.com

4페이지










20NK50Z 전자부품, 판매, 대치품
STFI20NK50Z
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
H9EfZ
`ad_

-;
H6E/H9E
;6 /#""g3
Figure 11. Normalized on resistance vs
temperature
D6Ea`
`ad_

-;
 




ª ª     F<z5
Figure 12. Maximum avalanche energy vs
temperature
7Se_<
-;
;6/#)3




H9E/#"H
;6/* '3


ª ª     F<z5
Figure 13. Normalized BVDSS vs temperature
4H6EEH
`ad_

;6/#_3

-;




     F<z5




ª ª     F<z5
Doc ID 019007 Rev 3
7/13
http://www.Datasheet4U.com

7페이지


구       성총 13 페이지
다운로드[ 20NK50Z.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

상호 : 아이지 인터내셔날

사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
20NK50Z

STP20NK50Z

STMicroelectronics
STMicroelectronics
20NK50Z

STFI20NK50Z

STMicroelectronics
STMicroelectronics

DataSheet.kr    |   2020   |  연락처   |  링크모음   |   검색  |   사이트맵