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SUD50P10-43 데이터시트 PDF




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기능 P-Channel MOSFET
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SUD50P10-43 데이터시트, 핀배열, 회로
New Product
SUD50P10-43
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
–100
rDS(on) (W)
0.043 at VGS = –10 V
ID (A)a
–38
Qg (Typ)
105 nC
FEATURES
D TrenchFETr Power MOSFET
RoHS
COMPLIANT
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
TC = 25 _C
TA = 25 _C
L = 0.1 mH
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
–100
"20
–38a
–31.8a
–9.4b, c
–7.8b, c
–50
–50a
–6.9b, c
–40
80
136
95
8.3b, c
5.8b, c
–50 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 _C/W.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
t p 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
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SUD50P10-43 pdf, 반도체, 판매, 대치품
SUD50P10-43
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Source-Drain Diode Forward Voltage
40
On-Resistance vs. Gate-to-Source Voltage
0.08
TJ = 150 _C
10
TJ = 25 _C
0.07
0.06
0.05
0.04
0.03
TA = 125 _C
TA = 25 _C
1
0.00
0.2 0.4 0.6 0.8 1.0
VSD – Source-to-Drain Voltage (V)
1.2
0.02
4
56789
VGS – Gate-to-Source Voltage (V)
10
Threshold Voltage
3.4
Single Pulse Power, Junction-to-Ambient
35
3.1
ID = 250 mA
2.8
2.5
2.2
1.9
30
25
20
15
10
5
1.6
–50 –25
0 25 50 75 100 125 150 175
TJ – Temperature (_C)
0
0.01
0.1
Safe Operating Area, Junction-to-Ambient
100
1 10
Time (sec)
100 1000
*Limited by rDS(on)
10
1
0.1
0.01
TA = 25 _C
Single Pulse
100 ms
1 ms
10 ms
100 ms
1s
10 s
dc
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0.001
0.1 1 10 100 1000
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
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SUD50P10-43 전자부품, 판매, 대치품
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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