STF40NF06
N-channel 60V - 0.024Ω - 23A - TO-220FP
STripFET™ II Power MOSFET
General features
Type
STF40NF06
VDSS
60V
RDS(on)
<0.028Ω
■ Exceptional dv/dt capability
■ Low gate charge at 100°C
■ Application oriented characterization
■ 100% avalanche tested
ID
23A
Description
This MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
3
2
1
TO-220FP
Internal schematic diagram
Applications
■ Switching application
Order codes
Part number
STF40NF06
September 2006
Marking
F40NF06
Package
TO-220FP
Packaging
Tube
Rev 3
1/12
www.st.com
12
http://www.Datasheet4U.com
Electrical characteristics
2 Electrical characteristics
STF40NF06
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1 µA
10 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
± 100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
4V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 11.5A
0.024 0.028 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
gfs (1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 30V, ID = 11.5A
VDS =25V, f=1 MHz,
VGS=0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=48V, ID = 10A
VGS =10V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
12 S
920 pF
225 pF
80 pF
32 nC
6.5 43 nC
15 nC
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDD = 30V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 13)
VDD = 30V, ID = 20A,
RG = 4.7Ω, VGS =10V
(see Figure 13)
Min. Typ. Max. Unit
27 ns
11 ns
27 ns
11 ns
4/12
http://www.Datasheet4U.com
STF40NF06
Electrical characteristics
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs
vs temperature
temperature
Figure 11. Source-drain diode forward
characteristics
Figure 12. Normalized breakdown voltage vs
temperature
7/12
http://www.Datasheet4U.com
