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부품번호 | 50N60T 기능 |
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기능 | IKW50N60T | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
TrenchStop® Series
IKW50N60T
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IKW50N60T 600V 50A
1.5V
175C K50T60 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175C)
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time3)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
600
802)
50
150
150
100
50
150
20
5
333
-40...+175
-55...+175
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Value limited by bond wire
3) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com
TrenchStop® Series
IKW50N60T
q
140A
120A
100A
80A
60A
40A
T =80°C
C
TC=110°C
Ic
20A
0A
100Hz
Ic
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 7)
100A
10A
tp=2µs
10µs
50µs
1ms
1A DC 10ms
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=15V)
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
80A
60A
40A
20A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com
4페이지 TrenchStop® Series
IKW50N60T
q
8.0mJ
*) Eon and Ets include losses
due to diode recovery
6.0mJ
Ets* *) E on a nd E ts in clu d e lo ss e s
6.0m J
due to diode recovery
5.0m J
Eon* 4 .0m J
E ts*
4.0mJ
2.0mJ
3.0m J
Eoff E off
2.0m J
1.0m J
E on*
0.0mJ
0A
20A 40A 60A 80A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 7Ω,
Dynamic test circuit in Figure E)
0.0m J
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
3.0mJ
2.0mJ
Eoff
1.0mJ Eon*
*) Eon and Ets include losses
due to diode recovery
Ets* 4m J
3mJ
E ts*
2mJ
1mJ
E on*
E off
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, RG = 7Ω,
Dynamic test circuit in Figure E)
0mJ
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 50A, RG = 7Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.5 12.06.2013
http://www.Datasheet4U.com
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
50N60 | IXRH50N60 | IXYS |
50N60T | IKW50N60T | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |