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PDF RMLV0408E Data sheet ( Hoja de datos )
| Número de pieza | RMLV0408E | |
| Descripción | 4Mb Advanced LPSRAM (512k word x 8bit) | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RMLV0408E Series
4Mb Advanced LPSRAM (512k word × 8bit)
Preliminary
R10DS0217EJ0001
Rev.0.01
2013.09.10
Description
The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher
performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP II or 32-pin STSOP.
Features
Single 3V supply: 2.7V to 3.6V
Access time: 45/55ns (max.)
Current consumption:
── Standby: 0.4µA (typ.)
Equal access and cycle times
Common data input and output
── Three state output
Directly TTL compatible
── All inputs and outputs
Battery backup operation
Part Name Information
Part Name
RMLV0408EGSP-4S2
Access
time
45 ns
RMLV0408EGSP-5S2
55 ns
RMLV0408EGSB-4S2
45 ns
RMLV0408EGSB-5S2
55 ns
RMLV0408EGSA-4S2
RMLV0408EGSA-5S2
45 ns
55 ns
Temperature
Range
-40 ~ +85°C
Package
525-mil 32-pin plastic SOP
400-mil 32-pin plastic TSOP II
8mm x 13.4mm STSOP
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 1 of 10
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1 page  
RMLV0408E Series
AC Characteristics
Test Conditions (Vcc = 2.7V ~ 3.6V, Ta = -40 ~ +85°C)
Input pulse levels: VIL = 0.4V, VIH = 2.4V
Input rise and fall time: 5ns
Input and output timing reference level: 1.4V
Output load: See figures (Including scope and jig)
I/O
Preliminary
1.4V
RL = 500 ohm
CL = 30 pF (-4S2)
CL = 50 pF (-5S2)
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Output hold from address change
Chip select to output in low-Z
Output enable to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Symbol
tRC
tAA
tACS
tOE
tOH
tCLZ
tOLZ
tCHZ
tOHZ
RMLV0408EG**-4S2
Min. Max.
45 ─
─ 45
─ 45
─ 22
10 ─
10 ─
5─
0 18
0 18
RMLV0408EG**-5S2
Min. Max.
55 ─
─ 55
─ 55
─ 30
10 ─
10 ─
5─
0 20
0 20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
7,8
7,8
7,8,9
7,8,9
Write Cycle
Parameter
Symbol
RMLV0408EG**-4S2
Min. Max.
RMLV0408EG**-5S2
Min. Max.
Unit
Note
Write cycle time
tWC 45 ─ 55 ─ ns
Address valid to write end
tAW 35 ─ 50 ─ ns
Chip select to write end
tCW 35 ─ 50 ─ ns
Write pulse width
tWP 35 ─ 40 ─ ns 10
Address setup time to write start
tAS 0 ─ 0 ─ ns
Write recovery time from write end tWR 0 ─ 0 ─ ns
Data to write time overlap
tDW 25 ─ 25 ─ ns
Data hold from write end
tDH 0 ─ 0 ─ ns
Output enable from write end
tOW 5 ─ 5 ─ ns 7
Output disable to output in high-Z
tOHZ 0 18 0 20 ns 7,9
Write to output in high-Z
tWHZ 0 18 0 20 ns 7,9
Note 7. This parameter is sampled and not 100% tested.
8. At any given temperature and voltage condition, tCHZ max is less than tCLZ min, and tOHZ max is less than tOLZ
min, for any device.
9. tCHZ, tOHZ and tWHZ are defined as the time when the I/O pins enter a high-impedance state and are not
referred to the I/O levels.
10. tWP is the interval between write start and write end.
A write starts when both of CS# and WE# become active
A write is performed during the overlap of a low CS#, a low WE#
A write ends when any of CS#, WE# becomes inactive.
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 5 of 10
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5 Page 
Revision History
RMLV0408E Series Data Sheet
Rev.
0.01
Date
2013.09.10
Page
─
Description
Summary
Preliminary First Edition issued
All trademarks and registered trademarks are the property of their respective owners.
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RMLV0408E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RMLV0408E | 4Mb Advanced LPSRAM (512k word x 8bit) | Renesas |
| RMLV0408EGSA-4S2 | 4Mb Advanced LPSRAM (512k word x 8bit) | Renesas |
| RMLV0408EGSA-5S2 | 4Mb Advanced LPSRAM (512k word x 8bit) | Renesas |
| RMLV0408EGSB-4S2 | 4Mb Advanced LPSRAM (512k word x 8bit) | Renesas |
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