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RMLV0408EGSP-5S2 데이터시트 PDF




Renesas에서 제조한 전자 부품 RMLV0408EGSP-5S2은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 RMLV0408EGSP-5S2 기능
기능 4Mb Advanced LPSRAM (512k word x 8bit)
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RMLV0408EGSP-5S2 데이터시트, 핀배열, 회로
RMLV0408E Series
4Mb Advanced LPSRAM (512k word × 8bit)
Preliminary
R10DS0217EJ0001
Rev.0.01
2013.09.10
Description
The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher
performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP II or 32-pin STSOP.
Features
Single 3V supply: 2.7V to 3.6V
Access time: 45/55ns (max.)
Current consumption:
── Standby: 0.4µA (typ.)
Equal access and cycle times
Common data input and output
── Three state output
Directly TTL compatible
── All inputs and outputs
Battery backup operation
Part Name Information
Part Name
RMLV0408EGSP-4S2
Access
time
45 ns
RMLV0408EGSP-5S2
55 ns
RMLV0408EGSB-4S2
45 ns
RMLV0408EGSB-5S2
55 ns
RMLV0408EGSA-4S2
RMLV0408EGSA-5S2
45 ns
55 ns
Temperature
Range
-40 ~ +85°C
Package
525-mil 32-pin plastic SOP
400-mil 32-pin plastic TSOP II
8mm x 13.4mm STSOP
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 1 of 10
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RMLV0408EGSP-5S2 pdf, 반도체, 판매, 대치품
RMLV0408E Series
Preliminary
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
VCC
Terminal voltage on any pin relative to VSS
VT
Power dissipation
PT
Operation temperature
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Note 2. -3.0V for pulse 30ns (full width at half maximum)
3. Maximum voltage is +4.6V.
DC Operating Conditions
Value
-0.5 to +4.6
-0.5*2 to VCC+0.3*3
0.7
-40 to +85
-65 to +150
-40 to +85
unit
V
V
W
°C
°C
°C
Parameter
Symbol
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC
VSS
VIH
VIL
Ta
Note 4. -3.0V for pulse 30ns (full width at half maximum)
DC Characteristics
Min.
2.7
0
2.2
-0.3
-40
Typ.
3.0
0
Max.
3.6
0
VCC+0.3
0.6
+85
Unit
V
V
V
V
°C
Note
4
Parameter
Input leakage current
Output leakage current
Operating current
Average operating current
Symbol
| ILI |
| ILO |
ICC
ICC1
Min.
Standby current
Standby current
ICC2
ISB
Typ.
0.1*5
0.4*5
Max.
1
1
10
20
2.5
0.3
2
Unit Test conditions
A Vin = VSS to VCC
A
CS# =VIH or OE# =VIH or WE#= VIL,
VI/O = VSS to VCC
mA
CS# =VIL,
Others = VIH/VIL, II/O = 0mA
mA
Min. cycle, duty =100%, II/O = 0mA
CS# =VIL, Others = VIH/VIL
Cycle =1s, duty =100%, II/O = 0mA
mA CS# 0.2V,
VIH Vcc-0.2V, VIL 0.2V
mA
CS# =VIH,
Others = VSS to VCC
A ~+25°C
ISB1
3 A ~+40°C Vin = VSS to VCC,
5 A ~+70°C CS# VCC-0.2V
─ ─ 7 A ~+85°C
Output high voltage
VOH 2.4
V IOH = -1mA
Output low voltage
VOH2
VOL
VCC-0.2
V IOH = -0.1mA
0.4 V IOL = 2.1mA
VOL2
0.2 V IOL = 0.1mA
Note 5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Capacitance
(Vcc = 2.7V ~ 3.6V, f = 1MHz, Ta = -40 ~ +85°C*2)
Parameter
Symbol Min. Typ. Max. Unit Test conditions
Note
Input capacitance
C in ─ ─ 8 pF
Vin =0V
6
Input / output capacitance
C I/O
Note 6. This parameter is sampled and not 100% tested.
10 pF
VI/O =0V
6
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 4 of 10
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RMLV0408EGSP-5S2 전자부품, 판매, 대치품
RMLV0408E Series
Write Cycle (1) (WE# CLOCK, OE#=”H” while writing)
A0~18
tWC
Valid address
CS#
tCW
WE#
tAW
tAS
tWP *14
tWR
OE#
I/O0~7
tWHZ *15,16
tOHZ *15,16
*17
tDW tDH
Valid Data
Preliminary
Note
14. tWP is the interval between write start and write end.
A write starts when both of CS# and WE# become active.
A write is performed during the overlap of a low CS# and a low WE#.
A write ends when any of CS# or WE# becomes inactive.
15. tOHZ and tWHZ are defined as the time when the I/O pins enter a high-impedance state and are not referred to
the I/O levels.
16. This parameter is sampled and not 100% tested.
17. During this period, I/O pins are in the output state so input signals must not be applied to the I/O pins.
R10DS0217EJ0001 Rev.0.01
2013.09.10
Page 7 of 10
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부품번호상세설명 및 기능제조사
RMLV0408EGSP-5S2

4Mb Advanced LPSRAM (512k word x 8bit)

Renesas
Renesas

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