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IRF1324S-7PPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1324S-7PPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRF1324S-7PPBF 자료 제공

부품번호 IRF1324S-7PPBF 기능
기능 Power MOSFET ( Transistor )
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IRF1324S-7PPBF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRF1324S-7PPBF 데이터시트, 핀배열, 회로
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
IRF1324S-7PPbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
24V
0.8mΩ
cmax.
1.0mΩ
G
ID (Silicon Limited)
429A
S ID (Package Limited)
240A
D
G
Gate
S
SS
S
S
G
D2Pak 7 Pin
D
Drain
S
Source
Base part number
IRF1324S-7PPbF
Package Type
D2Pak-7Pin
Standard Pack
Form
Tube
Tape and Reel Left
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÙAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jJunction-to-Ambient (PCB Mount) , D2Pak
Quantity
50
800
Orderable Part Number
IRF1324S-7PPbF
IRF1324STRL-7PP
Max.
™429
™303
240
1640
300
2.0
± 20
1.6
-55 to + 175
300 (1.6mm from case)
230
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.50
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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April 08, 2014
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IRF1324S-7PPBF pdf, 반도체, 판매, 대치품
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
450
400 Limited By Package
350
300
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4 www.irf.com © 2014 International Rectifier
IRF1324S-7PPbF
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
0 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
32
Id = 5mA
31
30
29
28
27
26
25
24
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1000
900
800
700
ID
TOP 45A
80A
BOTTOM 160A
600
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRF1324S-7PPBF 전자부품, 판매, 대치품
IRF1324S-7PPbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
20V
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
LD
+
VDD -
D.U.T
VGS
Second Pulse Width < 1μs
Duty Factor < 0.1%
Fig 23a. Switching Time Test Circuit
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
L
VCC
DUT
0
210KK
S
Id
Vgs
Vds
Vgs(th)
Fig 24a. Gate Charge Test Circuit
7 www.irf.com © 2014 International Rectifier
Qgodr
Qgd Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
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IRF1324S-7PPBF

Power MOSFET ( Transistor )

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