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IRF1324LPBF 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRF1324LPBF은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRF1324LPBF 자료 제공

부품번호 IRF1324LPBF 기능
기능 Power MOSFET ( Transistor )
제조업체 International Rectifier
로고 International Rectifier 로고


IRF1324LPBF 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRF1324LPBF 데이터시트, 핀배열, 회로
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
PD - 97353A
IRF1324SPbF
IRF1324LPbF
HEXFET® Power MOSFET
D VDSS
24V
RDS(on) typ.
1.3m
max.
ID (Silicon Limited)
1.65m
c340A
S ID (Package Limited) 195A
GDS
D2Pak
IRF1324SPbF
GDS
TO-262
IRF1324LPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
gRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
kJunction-to-Case
jkJunction-to-Ambient (PCB Mounted, steady-state)
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D
Drain
S
Source
Max.
340
240
195
1420
300
2.0
± 20
0.46
-55 to + 175
300
Units
A
W
W/°C
V
V/ns
°C
270
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
0.50
40
mJ
A
mJ
Units
°C/W
1
09/24/09
Free Datasheet http://www.Datasheet4U.com




IRF1324LPBF pdf, 반도체, 판매, 대치품
IRF1324S/LPbF
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0 0.5 1.0 1.5
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
300 Limited By Package
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
Limited by
package
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
DC
1
1 10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
32
Id = 5mA
30
28
26
24
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 44A
83A
BOTTOM 195A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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IRF1324LPBF 전자부품, 판매, 대치품
IRF1324S/LPbF
+
‚
-

RG
D.U.T +
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
www.irf.com
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7
Free Datasheet http://www.Datasheet4U.com

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부품번호상세설명 및 기능제조사
IRF1324LPBF

Power MOSFET ( Transistor )

International Rectifier
International Rectifier

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