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Q0165R 데이터시트 PDF




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기능 FSQ0165R
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Q0165R 데이터시트, 핀배열, 회로
September 2007
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311
Green Mode Fairchild Power Switch (FPS™) for
Valley Switching Converter - Low EMI and High Efficiency
Features
„ Optimized for Valley Switching (VSC)
„ Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
„ High-Efficiency through Minimum Voltage Switching
„ Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
„ Advanced Burst-Mode Operation for Low Standby
Power Consumption
„ Pulse-by-Pulse Current Limit
„ Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD)
„ Under-Voltage Lockout (UVLO) with Hysteresis
„ Internal Start-up Circuit
„ Internal High-Voltage SenseFET (650V)
„ Built-in Soft-Start (15ms)
Applications
„ Power Supply for DVP Player and DVD Recorder,
Set-Top Box
„ Adapter
„ Auxiliary Power Supply for PC, LCD TV, and PDP TV
Description
A Valley Switching Converter generally shows lower EMI
and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for valley switching
operation with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout, Leading Edge
Blanking (LEB), optimized gate driver, internal soft-start,
temperature-compensated precise current sources for
loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller
solutions, the FSQ-series reduces total cost, component
count, size and weight; while simultaneously increasing
efficiency, productivity, and system reliability. This device
provides a basic platform that is well suited for cost-
effective designs of valley switching fly-back converters.
Related Application Notes
„ AN-4137, AN-4141, AN-4147, AN-4150 (Flyback)
„ AN-4134 (Forward)
FPSTM is a trademark of Fairchild Semiconductor Corporation.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com




Q0165R pdf, 반도체, 판매, 대치품
Pin Configuration
GND
Vcc
Vfb
Sync
8-DIP
8-VLSOP
D
D
D
Vstr
FSQ0365RN Rev.01
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name
Description
1 GND SenseFET source terminal on primary side and internal control ground.
Positive supply voltage input. Although connected to an auxiliary transformer winding, current
2
Vcc
is supplied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram
Section). It is not until VCC reaches the UVLO upper threshold (12V) that the internal start-up
switch opens and device power is supplied via the auxiliary transformer winding.
The feedback voltage pin is the non-inverting input to the PWM comparator. It has a 0.9mA
current source connected internally while a capacitor and optocoupler are typically connected
3 Vfb externally. There is a time delay while charging external capacitor Cfb from 3V to 6V using an
internal 5μA current source. This time delay prevents false triggering under transient condi-
tions but still allows the protection mechanism to operate under true overload conditions.
This pin is internally connected to the sync-detect comparator for valley switching. Typically the
4
Sync
voltage of the auxiliary winding is used as Sync input voltage and external resistors and capac-
itor are needed to make time delay to match valley point. The threshold of the internal sync
comparator is 0.7V/0.2V.
This pin is connected to the rectified AC line voltage source. At start-up the internal switch sup-
5 Vstr plies internal bias and charges an external storage capacitor placed between the Vcc pin and
ground. Once the Vcc reaches 12V, the internal switch is opened.
6,7,8
Drain
The drain pins are designed to connect directly to the primary lead of the transformer and are
capable of switching a maximum of 700V. Minimizing the length of the trace connecting these
pins to the transformer will decrease leakage inductance.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
4
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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Q0165R 전자부품, 판매, 대치품
Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Symbol
Parameter
tW Detection Time Window
fS1 Initial Switching Freq.1 All but Q321
fS2 Initial Switching Freq.2
Q321
ΔfS Switching Frequency Variation(14)
IFB Feedback Source Current
DMIN
Minimum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
tS/S1
Internal Soft-Start Time1 All but Q321
tS/S2
Internal Soft-Start Time2
Q321
Burst Mode Section
VBURH
VBURL Burst-Mode Voltage
VBUR(HYS)
Protection Section
FSQ0365
FSQ0265
ILIM Peak Current Limit
FSQ0165
FSQ321
FSQ311
VSD Shutdown Feedback Voltage
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(14)
VOVP Over-Voltage Protection
tOVP
TSD
Over-Voltage Protection Blanking Time
Thermal Shutdown Temperature(14)
Sync Section
VSH
VSL
tSync
Sync Threshold Voltage
Sync Delay Time(14)(16)
Total Device Section
IOP Oper. Supply Current (Control Part Only)
ISTART Start Current
ICH
VSTR
Start-up Charging Current
Minimum VSTR Supply Voltage
Condition
TJ = 25°C, Vsync = 0V
-25°C < TJ < 85°C
VFB = 0V
VFB = 0V
After turn-on
With free-running frequency
With free-running frequency
TJ = 25°C, tPD = 200ns(15)
TJ = 25°C, di/dt = 240mA/µs
TJ = 25°C, di/dt = 200mA/µs
TJ = 25°C, di/dt = 175mA/µs
TJ = 25°C, di/dt = 125mA/µs
TJ = 25°C, di/dt = 112mA/µs
VCC = 15V
VFB = 5V
VCC = 15V, VFB = 2V
VCC = 15V
VCC = VSTART - 0.1V
(before VCC reaches VSTART)
VCC = 0V, VSTR = min. 40V
Notes:
13. Pulse test: Pulse-Width=300μs, duty=2%
14. Though guaranteed, it is not 100% tested in production.
15. Propagation delay in the control IC.
16. Includes gate turn-on time.
Min. Typ. Max. Unit
3.0 µs
50.5 55.6 61.7 kHz
84.0 89.3 95.2 kHz
±5 ±10 %
700 900 1100 µA
0%
11 12 13 V
789V
15 ms
10 ms
0.45 0.55 0.65
0.25 0.35 0.45
200
V
V
mV
1.32 1.50 1.68
1.06 1.20 1.34
0.8 0.9 1.0
0.53 0.60 0.67
0.53 0.60 0.67
5.5 6.0 6.5
456
200
5.5 6.0 6.5
234
125 140 155
A
V
µA
ns
V
µs
°C
0.55 0.70 0.85
0.14 0.20 0.26
300
V
V
ns
1 3 5 mA
270 360 450 µA
0.65 0.85 1.00 mA
26 V
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
7
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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Q0165R

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