11NM80 Datasheet PDF - ST Microelectronics
| Part Number | 11NM80 | |
| Description | STF11NM80 | |
| Manufacturers | ST Microelectronics | |
| Logo |  |
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STP11NM80 - STF11NM80
STB11NM80 - STW11NM80
N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247
MDmesh™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on) RDS(on)*Qg ID
STP11NM80
STF11NM80
STB11NM80
STW11NM80
800 V
800 V
800 V
800 V
< 0.40 Ω
< 0.40 Ω
< 0.40 Ω
< 0.40 Ω
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
14 Ω∗nC
11 A
11 A
11 A
11 A
■ TYPICAL RDS(on) = 0.35 Ω
■ LOW GATE INPUT RESISTANCE
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ BEST RDS(on)*Qg IN THE INDUSTRY
DESCRIPTION
The MDmesh™ associates the Multiple Drain pro-
cess with the Company’s PowerMesh™ horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar competi-
tion’s products.
Figure 1: Package
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The 800 V MDmesh™ family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Table 2: Order Codes
SALES TYPE
STP11NM80
STF11NM80
STB11NM80T4
STW11NM80
MARKING
P11NM80
F11NM80
B11NM80
W11NM80
PACKAGE
TO-220
TO-220FP
D2PAK
TO-247
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
October 2005
Rev. 2
1/14
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STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
Figure 9: Transfer Characteristics
Figure 12: Normalized Gate Threshold Voltage
vs Temperature
Figure 10: Transconductance
Figure 13: Static Drain-Source On Resistance
Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations
5/14
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| Information | Total 14 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 11NM80.PDF Datasheet ] | |
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