Datasheet.kr   

IRFM450 데이터시트 PDF




IRF에서 제조한 전자 부품 IRFM450은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IRFM450 자료 제공

부품번호 IRFM450 기능
기능 Power MOSFET ( Transistor )
제조업체 IRF
로고 IRF 로고


IRFM450 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 7 페이지수

미리보기를 사용할 수 없습니다

IRFM450 데이터시트, 핀배열, 회로
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on)
IRFM450
0.415
ID
12A
PD - 90493F
IRFM450
JANTX2N7228
JANTXV2N7228
REF: MIL-PRF-19500/592
500V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Units
12
8.0 A
48
150 W
1.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
750
12
15
3.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
02/05/02
Free Datasheet http://www.Datasheet4U.com




IRFM450 pdf, 반도체, 판매, 대치품
IRFM450
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
13
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com
Free Datasheet http://www.Datasheet4U.com

4페이지










IRFM450 전자부품, 판매, 대치품
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L= 10.4mH
Peak IL =12A, VGS = 10V
IRFM450
ISD 12A, di/dt 130A/µs,
VDD 500V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%
Case Outline and Dimensions — TO-254AA
3.78 [.149]
3.53 [.139]
A
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
17.40 [.685]
16.89 [.665]
123
20.32 [.800]
20.07 [.790]
C 17.40 [.685]
16.89 [.665]
3.81 [.150]
2X
3X
1.14 [.045]
0.89 [.035]
0.36 [.014] B A
13.84 [.545]
13.59 [.535]
0.12 [.005]
1.27 [.050]
1.02 [.040]
3.78 [.149]
3.53 [.139]
A
13.84 [.545]
13.59 [.535]
17.40 [.685]
B 22.73 [.895] 16.89 [.665]
21.21 [.835]
20.32 [.800]
20.07 [.790]
123
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
3.81 [.150]
4.82 [.190]
3.81 [.150]
3.81 [.150]
2X
3X
1.14 [.045]
0.89 [.035]
0.36 [.014] B A
0.12 [.005]
1.27 [.050]
1.02 [.040]
B
R 1.52 [.060]
4.06 [.160]
3.56 [.140]
NOTES :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
3. CONTROLLING DIMENS ION: INCH.
4. CONFORMS T O JEDEC OUTLINE TO-254AA.
PIN AS S IGNMENTS
1 = DRAIN
2 = S OURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
www.irf.com
7
Free Datasheet http://www.Datasheet4U.com

7페이지


구       성 총 7 페이지수
다운로드[ IRFM450.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IRFM450

Power MOSFET ( Transistor )

IRF
IRF
IRFM450

N-CHANNEL POWER MOSFET

Seme LAB
Seme LAB

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵