(PDF) 2SA821S Datasheet - PNP Transistor

Número de pieza	2SA821S
Descripción	PNP Transistor
Fabricantes	WEJ
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No Preview Available ! RoHS 2SA821S 2SA821S TRANSISTOR (PNP) TO-92S TDFEATURES .,LPower dissipation PD: 0.25 W (Tamb=25℃) Collector current OICM: -0.03 A Collector-base voltage CV(BR)CBO : -210 V Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 123 NELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter OCollector-base breakdown voltage RCollector-emitter breakdown voltage TEmitter-base breakdown voltage CCollector cut-off current EEmitter cut-off current LDC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat Test conditions Ic= -50µA , IE=0 IC= -0.1 mA , IB=0 IE= -50µA, IC=0 VCB=-150V, IE=0 VEB= -4.5 V , IC=0 VCE=-3 V, IC= -5mA IC= -2mA, IB= -0.2mA MIN -210 -210 -5 56 TYP MAX -1 -1 270 -0.6 UNIT V V V µA µA V ETransition frequency fT VCE=-5V, IC= -2mA 30 MHz JOutput capacitance Cob VCE=-5V, IE=0,f=1 MHz 12 pF WECLASSIFICATION OF hFE Rank N P Q Range 56-120 82-180 120-270 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] Free Datasheet http://www.Datasheet4U.com 1 page

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PDF 2SA821S Data sheet ( Hoja de datos )