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PDF MX29GL512EL Data sheet ( Hoja de datos )
| Número de pieza | MX29GL512EL | |
| Descripción | SINGLE VOLTAGE 3V ONLY FLASH MEMORY | |
| Fabricantes | MCNIX | |
| Logotipo |  |
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MX29GL512E H/L
MX29GL512E H/L DATASHEET
The MX29GL512E product family is not recommended for new designs. The MX29GL512F
family is the recommended replacement. Please refer to MX29GL512F datasheet for
full specifications and ordering information, or contact your local sales representative for
additional support.
P/N:PM1524
REV. 1.5, NOV. 13, 2013
http://www.Datasheet4U.com
1
1 page  
BLOCK DIAGRAM
MX29GL512E H/L
CE#
OE#
WE#
RESET#
BYTE#
WP#/ACC
CONTROL
INPUT
LOGIC
PROGRAM/ERASE
HIGH VOLTAGE
WRITE
STATE
MACHINE
(WSM)
A0-AM
ADDRESS
LATCH
AND
BUFFER
Q0-Q15/A-1
FLASH
ARRAY
Y-PASS GATE
ARRAY
SOURCE
HV
SENSE
AMPLIFIER
PGM
DATA
HV
PROGRAM
DATA LATCH
STATE
REGISTER
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
I/O BUFFER
AM: MSB address
P/N:PM1524
REV. 1.5, NOV. 13, 2013
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5 Page 
MX29GL512E H/L
FUNCTIONAL OPERATION DESCRIPTION (cont'd)
WRITE BUFFER PROGRAMMING OPERATION (cont'd)
ABORT will be executed for the Write Buffer Programming Sequence if following condition occurs:
• The value loaded is bigger than the page buffer size during "Number of Locations to Program"
• Address written in a sector is not the same as the one assigned during the Write-Buffer-Load command.
• Address/ Data pair written to a different write-buffer-page than the one assigned by the "Starting Address"
during the "write buffer data loading" operation.
• Writing not "Confirm Command" after the assigned number of "data load" cycles.
At Write Buffer Abort mode, the status register will be Q1=1, Q7=DATA# (last address written), Q6=toggle.
A Write-to-Buffer-Abort Reset command sequence has to be written to reset the device for the next operation.
Write buffer programming can be conducted in any sequence. However the CFI functions, autoselect, Secured
Silicon sector are not functional when program operation is in progress. Multiple write buffer programming opera-
tions on the same write buffer address range without intervening erases is available. Any bit in a write buffer ad-
dress range can’t be programmed from 0 back to 1.
DEVICE RESET
Driving the RESET# pin LOW for a period of Trp or more will return the device to Read mode. If the device is in
the middle of a program or erase operation, the reset operation will take at most a period of Tready1 before the
device returns to Read mode. Until the device does returns to Read mode, the RY/BY# pin will remain Low (Busy
Status).
When the RESET# pin is held at GND±0.3V, the device only consumes standby (Isbr) current. However, the de-
vice draws larger current if the RESET# pin is held at a voltage greater than GND+0.3V and less than or equal to
Vil.
It is recommended to tie the system reset signal to the RESET# pin of the flash memory. This allows the device
to be reset with the system and puts it in a state where the system can immediately begin reading boot code
from it.
STANDBY MODE
The device enters Standby mode whenever the RESET# and CE# pins are both held High except in the embed-
ded mode. While in this mode, WE# and OE# will be ignored, all Data Output pins will be in a high impedance
state, and the device will draw minimal (Isb) current.
OUTPUT DISABLE
While in active mode (RESET# HIGH and CE# LOW), the OE# pin controls the state of the output pins. If OE# is
held HIGH, all Data (I/O) pins will remain tri-stated. If held LOW, the Byte or Word Data (I/O) pins will drive data.
P/N:PM1524
REV. 1.5, NOV. 13, 2013
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MX29GL512EL.PDF ] | |
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