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부품번호 | STD11NM50N 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 16 페이지수
STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET
in DPAK, TO-220FP and TO-220
Features
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
VDSS @TJmax
RDS(on)
max
550 V
< 0.47 Ω
ID
8.5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
DPAK
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
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Table 1. Device summary
Order codes
STD11NM50N
STF11NM50N
STP11NM50N
Marking
11NM50N
11NM50N
11NM50N
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
November 2010
Doc ID 17156 Rev 3
1/16
www.st.com
16
http://www.Datasheet4U.com
Electrical characteristics
STD11NM50N, STF11NM50N, STP11NM50N
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 4.5 A
Min. Typ. Max. Unit
500 V
1 µA
100 µA
100 nA
2 3 4V
0.4 0.47 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
547 pF
- 42 - pF
2 pF
Coss
(1)
eq.
Output equivalent
capacitance
VDS = 0 to 400 V, VGS = 0
- 210 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
- 5.8 - Ω
Qg Total gate charge
VDD = 400 V, ID = 8.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
19 nC
- 3.7 - nC
10 nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
4/16 Doc ID 17156 Rev 3
4페이지 STD11NM50N, STF11NM50N, STP11NM50N
Electrical characteristics
Figure 8. Output characteristics
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Figure 9.
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Transfer characteristics
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Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
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Figure 12. Capacitance variations
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Figure 13. Output capacitance stored energy
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#ISS
#OSS
#RSS
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6$36
Doc ID 17156 Rev 3
7/16
7페이지 | |||
구 성 | 총 16 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
STD11NM50N | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |