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PDF STP18N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STP18N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STF18N65M5, STI18N65M5, STP18N65M5,
STW18N65M5
N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET
in TO-220FP, I²PAK, TO-220 and TO-247 packages
Datasheet — production data
Features
Order code
STF18N65M5
STI18N65M5
STP18N65M5
STW18N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.22 Ω 15 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
123
I²PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code
Marking
STF18N65M5
STI18N65M5
STP18N65M5
STW18N65M5
18N65M5
'
3
!-V
Package
TO-220FP
I²PAK
TO-220
TO-247
Packaging
Tube
July 2012
This is information on a product in full production.
Doc ID 022879 Rev 3
1/19
www.st.com
19
http://www.Datasheet4U.com
1 page  
STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21 and
Figure 24)
Min.
-
Typ.
36
7
9
11
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 15 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 24)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
15 A
60 A
1.5 V
290 ns
3.4 µC
23.5 A
352 ns
4 µC
24 A
Doc ID 022879 Rev 3
5/19
5 Page 
STF18N65M5, STI18N65M5, STP18N65M5, STW18N65M5
Figure 25. TO-220FP drawing
Package mechanical data
Doc ID 022879 Rev 3
7012510_Rev_K_B
11/19
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet STP18N65M5.PDF ] | |
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