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Número de pieza | 7MBR75UB120 | |
Descripción | IGBT MODULE | |
Fabricantes | Fuji Electric | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 7MBR75UB120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! 7MBR75UB120
IGBT MODULE (U series)
1200V / 75A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact Package
· P.C. Board Mount Module
· Converter Diode Bridge Dynamic Brake Circuit
Applications
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power disspation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
-IC pulse
PC
VCES
VGES
IC
ICP
Collector power disspation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t (Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1ms
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rat ing
1200
±20
75
50
150
100
75
150
275
1200
±20
35
25
70
50
160
1200
1600
75
520
1352
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
connected together and shorted to base plate when isolation test will be done.
Unit
V
V
A
W
V
V
A
W
V
V
A
A
A2s
°C
°C
V
V
N·m
http://www.Datasheet4U.com
1 page IGBT Module
7MBR75UB120
[ Inverter ]
Forward current vs. Forward on voltage (typ .)
chip
120
T j=25°C
100
80 T j=125° C
60
40
20
0
01 23
Forward on vol t age : VF [ V ]
4
[ Converter ]
Forward current vs. Forward on voltage (typ .)
chip
120
T j=25°C
100
80
T j=125° C
60
40
20
0
0.0
0.5 1.0 1.5 2.0
Forward on vol t age : VFM [ V ]
2. 5
10.000
Transient thermal resistance (max.)
1000
[ Inverter ]
Reverse recovery characteristics (ty p.)
Vcc=600V, VGE=±15V, Rg=22Ω
trr (125° C)
100 trr (2 5°C)
Irr (125° C)
Irr (25°C)
10
0
25 50 75
Forward current : I F [ A ]
100
[ Thermistor ]
Temp erature characteristic (typ.)
100
1.000
0.100
IGBT[Bra ke]
FW D[In ve rte r]
Conv. Diode
IGBT[In verter]
10
1
0.010
0.001
0.010
0.100
Pulse width : Pw [ sec ]
1. 000
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Temperature [°C ]
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 7MBR75UB120.PDF ] |
Número de pieza | Descripción | Fabricantes |
7MBR75UB120 | IGBT MODULE | Fuji Electric |
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