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Número de pieza | LUH100G1201Z | |
Descripción | 1200V 100A 2-Pack IGBT Module | |
Fabricantes | LSIS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LUH100G1201Z (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! LUH100G1201
LUH100G1201Z*(1)
SUSPM™
1200V 100A 2-Pack IGBT Module
Features
• Soft Punch Through (SPT+) Technology
- Low Loss
- Highly rugged SPT+ design
• Free Wheeling Diodes with soft reverse recovery
• Industrial standard package with copper base plate
• Included ESD protection function *(1)
Applications
• Welder / Power Supply
• UPS / Inverter
• Industrial Motor Driver
Preliminary data
SUSPM1
94.5 x 34.5 x 31.1 mm
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Item
IGBT
Diode
Module
Symbol
VCES
VGES
IC
ICM
TSC
Tj
PD
VRRM
IF
IFRM
Tj
Tstg
Viso
Mt
MS
W
Conditions
@Tj = 150 °C, TC = 25 °C, Continuous
@Tj = 150°C, TC = 80°C, Continuous
@TC = 80 °C, tP = 1 ms
Chip Level, @Tj = 125 °C, VGE = 15 V, VCC = 800 V, VCE < VCES
Operating Junction Temperature *(2)
@Tj = 150 °C, TC = 25 °C
@Tj = 150 °C, TC = 80 °C
@Tj = 150°C, Continuous
tP = 1 ms
Operating Junction Temperature *(2)
Storage Temperature
@ AC 1minute
Main Terminal Mounting torque (M5)
Heat sink Mounting torque (M6)
Weight
Internal Circuit & Pin Description
Pin Number
1
2
3
4
5
6
7
Pin Name
C2E1
E2
C1
G1
E1
G2
E2
Pin Description
Output
Negative DC Link Output
Positive DC Link Output
Gate Input for High-side
Emitter Input for High-side
Gate Input for Low-side
Emitter Input for Low-side
Value
1200
± 20
150
100
200
10
-40~125
600
300
1200
100
200
-40~125
-40~125
2500
2.5~5
3.0~5
180
Units
V
V
A
A
A
μs
°C
W
W
V
A
A
°C
°C
V
Nm
Nm
g
(Note *1) Option : Included ± 28 V Zener Diode between Gate and Emitter.
(Note *2) The Maximum junction temperature of chip is 150 °C.
©2012 LSIS, Preliminary Data Rev 0.3_06.01.2012
1 of 7
http://www.Datasheet4U.com
1 page LUH100G1201Z*(1)
Fig 13. Typical Diode Switching Loss
Fig 14. Typical Diode Switching Loss
Fig 15. Typical Gate Charge Characteristics
Fig 16. Case Temperature vs. Collector Current
Fig 17. Case Temperature vs. Diode Current
©2012 LSIS, Preliminary Data Rev 0.3_06.01.2012
Fig 18. Typical IGBT Thermal Impedance
5 of 7
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet LUH100G1201Z.PDF ] |
Número de pieza | Descripción | Fabricantes |
LUH100G1201 | 1200V 100A 2-Pack IGBT Module | LSIS |
LUH100G1201Z | 1200V 100A 2-Pack IGBT Module | LSIS |
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