AN11158 Datasheet PDF - NXP Semiconductors
| Part Number | AN11158 | |
| Description | Understanding power MOSFET data sheet parameters | |
| Manufacturers | NXP Semiconductors | |
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AN11158
Understanding power MOSFET data sheet parameters
Rev. 4 — 4 February 2014
Application note
Document information
Info Content
Keywords
MOSFET.
Abstract
This application note describes the content of power MOSFET data sheet
parameters
http://www.Datasheet4U.com
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NXP Semiconductors
AN11158
Understanding power MOSFET data sheet parameters
Table 2. Pinning
Pin Symbol Description
1S
source
2S
source
3S
source
4G
gate
mb D
mount base: connected to drain
Simplified outline Graphic symbol
mb D
1234
G
mbb076 S
2.3 Ordering information
The ordering section provides information on how to order the device.
2.4 Limiting values
The limiting values table provides the range of operating conditions allowed for the
MOSFET. The conditions are defined in accordance with the absolute maximum rating
system (IEC60134). Operation outside of these conditions is not guaranteed, so it is
recommended that these values are not exceeded. Doing so runs the risk of immediate
device failure or reduced lifetime of the MOSFET. The avalanche ruggedness conditions,
when given, describe the limited conditions for which the VDS rating can be exceeded.
To calculate how the limiting values change with temperature, they are read together with
the derating curves provided.
The limiting values table for the BUK7Y12-55B is given as an example of a standard
limiting values table, in Table 3.
Table 3. Limiting values
In accordance with the absolute maximum rating system IEC 60134
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj 25C; Tj 175C
RGS = 20 k
VGS = 10 V; Tmb = 25C;
Table 1; Figure 1
VGS = 10 V; Tmb = 100C;
Table 1
IDM peak drain current
VGS = 10 V; Tmb = 25C;
pulsed; Figure 1
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tmb = 25C
IS source current
Tmb = 25C
ISM
peak source current
tp 10 s; pulsed;
Tmb =2 5C
Min Typ Max
- - 55
--5 5
20 - +20
- - 61.8
Unit
V
V
V
A
- - 43.7 A
- - 247 A
--
55 -
55 -
105 W
+175 C
+175 C
- - 61.8 A
- - 247 A
AN11158
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 4 February 2014
© NXP B.V. 2014. All rights reserved.
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| Information | Total 28 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AN11158.PDF Datasheet ] | |
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