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PDF SPC6604 Data sheet ( Hoja de datos )
| Número de pieza | SPC6604 | |
| Descripción | N & P Pair Enhancement Mode MOSFET | |
| Fabricantes | SYNC POWER | |
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Hay una vista previa y un enlace de descarga de SPC6604 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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SPC6604
N & P Pair Enhancement Mode MOSFET
DESCRIPTION
The SPC6604 is the N- a nd P-Channel enhancement
mode power field ef fect transistors ar e produced using
high cell den sity , DMOS trench technolog y. This h igh
density process is especially tailored to minimize on-state
resistance an d provi de superior switching perform ance.
These devic es are particu larly suited for low voltage
applications such as noteboo
k co mputer power
management and other battery powered circuits where
high-side s witching , low in-line power los s, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V
20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V
20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V
P-Channel
-20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TSOT–23- 6P package design
PIN CONFIGURATION( TSOT-23– 6P )
PART MARKING
2013/12/25 Ver.1
Page 1
http://www.Datasheet4U.com
1 page  
SPC6604
N & P Pair Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS ( N-Channel )
2013/12/25 Ver.1
Page 5
5 Page 
SPC6604
N & P Pair Enhancement Mode MOSFET
2013/12/25 Ver.1
Page 11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SPC6604.PDF ] | |
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