|
|
Datasheet SPN12T20 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | SPN12T20 | N-Channel Enhancement Mode MOSFET SPN12T20
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN12T20 is the N-Channe l logi c enhancement m ode power field ef fect transistor which is produced using super high cell den sity DMOS tr ench technology. The SPN12T20 has been designed specifically to im prove the overall efficiency of DC | SYNC POWER | mosfet |
SPN Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | SPN01N60C3 | Cool MOS Power Transistor Rev. 2.1
SPN01N60C3
VDS @ Tjmax RDS(on) ID 650 6 0.3
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
V Ω A
3 2 1
VPS05163
Type
Pac Infineon transistor | | |
2 | SPN01N60S5 | Cool MOS Power-Transistor
Preliminary data
SPN01N60S5
Cool MOS
Power-Transistor
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity
C O OLMO S
Power Semiconductors
Product Summary VDS @ Tjmax RDS(on) ID
SOT-223
ì
650 6 Infineon Technologies transistor | | |
3 | SPN02N60C3 | Power Transistor Rev. 2.1
SPN02N60C3
VDS @ Tjmax RDS(on) ID 650 3 0.4
SOT223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
V Ω A
low effective capacitances
3 2 1
VPS05163
Type SPN02N60C3
Pa Infineon Technologies transistor | | |
4 | SPN02N60S5 | Power Transistor SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 1
3
VPS05163
Typ Infineon Technologies transistor | | |
5 | SPN03N60C3 | Cool MOS Power Transistor Rev. 2.0
SPN03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 0.7
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
SPN03N6 Infineon Technologies transistor | | |
6 | SPN03N60S5 | Cool MOS Power Transistor SPN03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
2 1
VPS05163
VDS RDS(on) ID
600 1.4 0.7
SOT-223
4
V Ω A
3
Type SPN03N60S5
Package Infineon Technologies transistor | | |
7 | SPN04N60C2 | Cool MOS Power Transistor Final data
SPN04N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
Product Summary VDS RDS(on) ID 600 0.95 0.8
SOT-223
4
V Ω A
• Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Infineon transistor | |
Esta página es del resultado de búsqueda del SPN12T20. Si pulsa el resultado de búsqueda de SPN12T20 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |