(PDF) SPN2306W Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN2306W
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN2306W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 30V/5.4A,RDS(ON)= 38mΩ@VGS=10V 30V/4.6A,RDS(ON)= 42mΩ@VGS=4.5V 30V/3.8A,RDS(ON)= 55mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION(SOT-23) PART MARKING 2012/08/07 Ver.1 Page 1 http://www.Datasheet4U.com 1 page SPN2306W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/08/07 Ver.1 Page 5 5 Page

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PDF SPN2306W Data sheet ( Hoja de datos )