(PDF) SPN3402W Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	SPN3402W
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPN3402W N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN3402W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES 30V/2.8A,RDS(ON)= 58mΩ@VGS=10V 30V/2.3A,RDS(ON)= 65mΩ@VGS=4.5V 30V/1.5A,RDS(ON)= 105mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PIN CONFIGURATION ( SOT-23 ) PART MARKING 2012/11/08 Ver.1 Page 1 http://www.Datasheet4U.com 1 page SPN3402W N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/11/08 Ver.1 Page 5 5 Page

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PDF SPN3402W Data sheet ( Hoja de datos )