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PDF SPN6338 Data sheet ( Hoja de datos )

Número de pieza SPN6338
Descripción Dual N-Channel Enhancement Mode MOSFET
Fabricantes SYNC POWER 
Logotipo SYNC POWER Logotipo



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SPN6338
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6338 is the Dual N-Channel enhancem ent mode
power field effect transistors are produced using high cell
density , D MOS trench technolog y. This high densit y
process is especi ally tailored to minim ize on-state
resistance an d provi de superior switching perform ance.
These devic es are particu larly suited for low voltage
applications such as noteboo
k co mputer power
management and other battery powered circuits where
high-side s witching , low in-line power los s, and
resistance to transients are needed.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
N-Channel
30V/0.95A,RDS(ON)=550m@VGS=4.5V
30V/0.75A,RDS(ON)=650m@VGS=2.5V
30V/0.65A,RDS(ON)=850m@VGS=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 (SC-70-6L) package design
PIN CONFIGURATION( SOT-363 / SC-70-6L)
PART MARKING
2013/06/24 Ver. Preliminary
Page 1
http://www.Datasheet4U.com

1 page




SPN6338 pdf
SPN6338
Dual N-Channel Enhancement Mode MOSFET
TYPICAL CHA RACTERISTICS
2013/06/24 Ver. Preliminary
Page 5

5 Page










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