(PDF) SPP3467 Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP3467
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP3467 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3467 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES -20V/-5.0A,RDS(ON)= 90mΩ@VGS=-4.5V -20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6P package design PIN CONFIGURATION(TSOP-6P) PART MARKING 2009/06/15 Ver.2 Page 1 http://www.Datasheet4U.com 1 page SPP3467 P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/06/15 Ver.2 Page 5 5 Page

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PDF SPP3467 Data sheet ( Hoja de datos )