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PDF PMEG4010EPK Data sheet ( Hoja de datos )
| Número de pieza | PMEG4010EPK | |
| Descripción | 40V 1A low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
Rev. 2 — 6 March 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a leadless ultra small
SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
1.2 Features and benefits
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 40 V
Low forward voltage VF ≤ 600 mV
Low reverse current
AEC-Q101 qualified
Solderable side pads
Package height typ. 0.37 mm
Ultra small and leadless SMD plastic
package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
LED backlight for mobile application
Low power consumption applications
Ultra high-speed switching
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
IR
trr
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
reverse recovery time
Conditions
δ = 0.5; f = 20 kHz; Tamb ≤ 90 °C;
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 135 °C;
square wave
Tj = 25 °C
IF = 1 A; pulsed; tp ≤ 300 µs; δ≤ 0.02;
Tj =2 5° C
VR =1 0V ; Tj = 25 °C
IR =0 .5 A; IF = 0.5 A; IR(meas) =0 .1 A;
Tj =2 5 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[1]
Min Typ Max Unit
- - 1A
- - 1A
--4 0 V
- 540 600 mV
-
0.6 4
µA
-3 -n s
http://www.Datasheet4U.com
1 page  
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
102
Zth(j-a)
(K/W)
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
006aac999
0.05
0
0.02
0.01
10
10-3
10-2
10-1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
VFRM
Characteristics
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
peak forward recovery
voltage
Conditions
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ≤ 0.02; Tj =2 5 °C
IF = 500 mA; pulsed; tp ≤ 300 µs;
δ≤ 0.02; Tj =2 5 °C
IF = 700 mA; pulsed; tp ≤ 300 µs;
δ≤ 0.02; Tj =2 5 °C
IF = 1 A; pulsed; tp ≤ 300 µs; δ≤ 0.02;
Tj = 25 °C
VR =1 0V ; Tj = 25 °C
VR =4 0V ; Tj =2 5 °C
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR =1 0V ; f=1M Hz; Tj = 25 °C
IF = 0.5 A; IR = 0.5 A; IR(meas) =0 .1 A;
Tj =2 5° C
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
Min Typ Max Unit
- 345 390 mV
- 440 500 mV
- 480 550 mV
- 540 600 mV
-
0.6 4
µA
- 3 20 µA
- 50 60 pF
- 20 25 pF
-3 -n s
- 460 - mV
PMEG4010EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
PMEG4010EPK
40 V, 1 A low VF MEGA Schottky barrier rectifier
11. Revision history
Table 8. Revision history
Document ID
Release date
Data sheet status
PMEG4010EPK v.2
Modifications:
20120306
Product data sheet
• Fig 14. and 15: title corrected
PMEG4010EPK v.1 20120302
Product data sheet
Change notice
-
-
Supersedes
PMEG4010EPK v.1
-
PMEG4010EPK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 March 2012
© NXP B.V. 2012. All rights reserved.
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