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BU4911 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BU4911은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BU4911 기능
기능 Low Voltage Standard CMOS Voltage Detector IC Series
제조업체 ROHM Semiconductor
로고 ROHM Semiconductor 로고


BU4911 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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BU4911 데이터시트, 핀배열, 회로
Voltage Detector IC Series
Low Voltage Standard
CMOS Voltage Detector IC Series
BU48□□G, BU48□□F, BU48□□FVE, BU49□□G, BU49□□F, BU49□□FVE series
No.09006ECT01
Description
ROHM standard CMOS reset IC series is a high-accuracy low current consumption reset IC series.
The lineup was est ablished with t wo o utput ty pes (Nch open dra in an d CMOS output) and detection volt age ran ge from
0.9V to 4.8V in increments of 0.1V, so that the series may be selected according to the application at hand.
Features
1) Detection voltage from 0.9V to 4.8V in 0.1V increments
2) Highly accurate detection voltage: ±1.0%
3) Ultra-low current consumption
4) Nch open drain output (BU48□□G/F/FVE)and CMOS output (BU49□□G/F/FVE)
5) Small surface package
SSOP5: BU48□□GBU49□□G
SOP4:
BU48□□FBU49□□F
VSOF5:
BU48□□FVEBU49□□FVE
Applications
All electronics devices that use microcontrollers and logic circuits.
Selection Guide
Part Number : BU4
12 3
No.
Specifications Descripti
on
1 Output Circuit Format 8:Open Drain Output, 9:CMOS Output
2 Detection Voltage
Example V DET: Represented as 0.1V step s in th e
range from 0.9V to 4.8V
3 Package
(Displayed as 0.9 in the case of 0.9V)
G:SSOP5(SMP5C2)/ F:SOP4/ FVE:VSOF5(EMP5)
Lineup
Detection
Making
voltage
JR 4.8V
JQ 4.7V
JP 4.6V
JN 4.5V
JM 4.4V
JL 4.3V
JK 4.2V
JJ 4.1V
JH 4.0V
JG 3.9V
JF 3.8V
JE 3.7V
JD 3.6V
JO 3.5V
JB 3.4V
JA 3.3V
HZ 3.2V
HY 3.1V
HX 3.0V
HW 2.9V
Part
Number
BU4848
BU4847
BU4846
BU4845
BU4844
BU4843
BU4842
BU4841
BU4840
BU4839
BU4838
BU4837
BU4836
BU4835
BU4834
BU4833
BU4832
BU4831
BU4830
BU4829
Detection
Making
voltage
HV 2.8V
HU 2.7V
HT 2.6V
HS 2.5V
HR 2.4V
HQ 2.3V
HP 2.2V
HN 2.1V
HM 2.0V
HL 1.9V
HK 1.8V
HJ 1.7V
HH 1.6V
HG 1.5V
HF 1.4V
HE 1.3V
HD 1.2V
HC 1.1V
HB 1.0V
HA 0.9V
Part
Number
Detection
Making
voltage
Part
Number
BU4828 LH
4.8V BU4948
BU4827
LG
4.7V
BU4947
BU4826
LF 4.6V
BU4946
BU4825
LE
4.5V
BU4945
BU4824 LD
4.4V BU4944
BU4823 LC
4.3V BU4943
BU4822
LB
4.2V
BU4942
BU4821
LA
4.1V
BU4941
BU4820 KZ
4.0V BU4940
BU4819
KY
3.9V
BU4939
BU4818
KX
3.8V
BU4938
BU4817 KW
3.7V
BU4937
BU4816
KV
3.6V
BU4936
BU4815
KU
3.5V
BU4935
BU4814 KT
3.4V BU4934
BU4813
KS
3.3V
BU4933
BU4812
KR
3.2V
BU4932
BU4811
KQ
3.1V
BU4931
BU4810
KP
3.0V
BU4930
BU4809
KN
2.9V
BU4929
Detection
Making
voltage
KM 2.8V
KL 2.7V
KK 2.6V
KJ 2.5V
KH 2.4V
KG 2.3V
KF 2.2V
KE 2.1V
KD 2.0V
KC 1.9V
KB 1.8V
KA 1.7V
JZ 1.6V
JY 1.5V
JX 1.4V
JW 1.3V
JV 1.2V
JU 1.1V
JT 1.0V
JS 0.9V
Part
Number
BU4928
BU4927
BU4926
BU4925
BU4924
BU4923
BU4922
BU4921
BU4920
BU4919
BU4918
BU4917
BU4916
BU4915
BU4914
BU4913
BU4912
BU4911
BU4910
BU4909
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
1/8
2009.06 - Rev .C http://www.Datasheet4U.com




BU4911 pdf, 반도체, 판매, 대치품
BU48□□G, BU48□□F, BU48□□FVE, BU49□□G, BU49□□F, BU49□□FVE series Technical Note
Reference Data (Unless specified otherwise, Ta=25°C)
0.6
BU4816F
0.5
0.4
0.3
0.2
0.1
0.0
01
2 3 45
67
VDD SUPPLY VOLTAGE VDD [V]
Fig.3 Circuit Current
5
BU4816F
4
3
2 VDD=1.2V
1
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.4 “LOW” Output Current
25
BU4916F
20 VDD=6.0V
15
VDD=4.8V
10
5
0
01
2 3 45
6
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.5 “High” Output Current
7
BU4816F
6
5
4
3
2
1
0
01
2 3 45
67
VDD SUPPLY VOLTAGE VDD [V]
Fig.6 I/O Characteristics
0.5
BU4816F
0.4
0.3
0.2
0.1
0.0
-40
0 40 80 120
TEMPERATURE Ta[]
Fig.9 Circuit Current when ON
1.0
BU4816F
0.8
0.6
0.4
0.2
0.0
0.0 0.5 1.0 1.5 2.0 2.5
VDD SUPPLY VOLTAGE VDD [V]
Fig.7 Operating Limit Voltage
1.0
BU4816F
0.8
0.6
0.4
0.2
0.0
-40
0 40 80 120
TEMPERATURE Ta[]
Fig.10 Circuit Current when OFF
2.0
Low to high(VDET+ΔVDET)
1.5
High to low(VDET)
BU4816F
1.0
-40 0
40 80 120
TEMPERATURE Ta[]
Fig.8 Detecting Voltage
Release Voltage
1.0
BU4816F
0.8
0.6
0.4
0.2
0.0
-40
0 40 80 120
TEMPERATURE Ta[]
Fig.11 Operating Limit Voltage
www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.
4/8
2009.06 - Rev .C

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BU4911 전자부품, 판매, 대치품
BU48□□G, BU48□□F, BU48□□FVE, BU49□□G, BU49□□F, BU49□□FVE series Technical Note
Operation Notes
1 . Absolute maximum range
Absolute Maximum Ratings are those values beyond which the life of a device may be destroyed. We cannot be defined the
failure mode, such as short mode or open mode. Therefore a physical security countermeasure, like fuse, is to be given
when a specific mode to be beyond absolute maximum ratings is considered.
2 . GND potential
GND terminal should be a lowest voltage potential every state.
Please make sure all pins that are over ground even if include transient feature.
3 . Electrical Characteristics
Be sure to ch eck the el ectrical char acteristics, that are one the tent ative specif ication will b e cha nged b y temp erature,
supply voltage, and external circuit.
4 . Bypass Capacitor for Noise Rejection
Please put into the to reject noise between VDD pin and GND with 1uF over and between VOUT pin and GND with 1000pF.
If extremely big capacitor is used, transient response might be late. Please confirm sufficiently for the point.
5 . Short Circuit between Terminal and Soldering
Don’t short-circuit between Output pin and VDD pin, Output pin and GND pin, or VDD pin and GND pin. When soldering the
IC on circuit board please is unusually cautious about the orientation and the position of the IC. When the orientation is
mistaken the IC may be destroyed.
6 . Electroma gnetic Field
Mal-function may happen when the device is used in the strong electromagnetic field.
7 . The VDD line inpedance might cause oscillation because of the detection current.
8. A VDD -GND capacitor (as close connection as possible) should be used in high VDD line impedance condition.
9 . Lower than the mininum input voltage makes the VOUT high impedance, and it must be VDD in pull up (VDD) condition.
10. Recommended value of RL Resistar is over 10k(VDET=1.5V~4.8V),
over 100k(VDET=0.9~1.4V).
11. This IC has extremely high impedance terminals. Small leak current due to the uncleanness of PCB surface might cause
unexpected operations. Application values in these conditions should be selected carefully. If 10Mleakage is assumed
between the CT terminal and the GND terminal, 1Mconnection between the CT terminal and the VDD terminal would be
recommended. Also, if the leakage is assumed between the VOUT terminal and the GND terminal, the pull up resistor
should be less than 1/10 of the assumed leak resistance.
12. Ex ternal parameters
For RL, the recommended range is 10k~1M. There are many factors (board layout, etc) that can affect characteristics.
Please verify and confirm using practical applications.
13. Power on reset operation
Please note that the power on reset output varies with the Vcc rise up time. Please verify the actual operation.
14. Precautions for board inspection
Connecting low-impedance capacitors to run inspections with the board may produce stress on the IC. Therefore, be
certain to use proper discharge procedure before each process of the test operation.
To prevent electrostatic accumulation and discharge in the assembly process, thoroughly ground yourself and any
equipment that could sustain ESD damage, and continue observing ESD-prevention procedures in all handing, transfer
and storage operations. Before attempting to connect components to the test setup, make certain that the power supply is
OFF. Likewise, be sure the power supply is OFF before removing any component connected to the test setup.
15. W hen the po wer su pply, is turned on b ecause of ince rtain case s, moment ary Rash-current flo w i nto the IC at the log ic
unsettled, the couple capacitance, GND pattern of width and leading line must be considered.
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© 2009 ROHM Co., Ltd. All rights reserved.
7/8
2009.06 - Rev .C

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