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IRLU3636PBF 데이터시트 PDF : 부품 기능 및 핀배열

부품번호 IRLU3636PBF
기능 Power MOSFET
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IRLU3636PBF 데이터시트 및 IRLU3636PBF PDF

1페이지

IRLU3636PBF pdf, 반도체, 판매, 대치품
IRLR/U3636PbF
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.1 0.4 0.7 1 1.3 1.6 1.9
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
110
100 Limited By Package
90
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
0.8
0.6
0.4
0.2
0.0
0 5 10 15 20 25 30 35 40 45 50 55 60 65
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4
1000
100
OPERATION IN THIS AREA LIMITED BY RDS(on)
100µsec
10 LIMITED BY PACKAGE
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
55
50
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
800
ID
700 TOP 5.69A
600
10.64A
BOTTOM 50A
500
400
300
200
100
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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4페이지

IRLU3636PBF 전자부품, 판매, 대치품
IRLR/U3636PbF
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor Cuurrerennt t
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
www.irf.com
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
7

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IRLU3636PBF

The functions of this components is a Power MOSFET.

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