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PDF C3743 Data sheet ( Hoja de datos )
| Número de pieza | C3743 | |
| Descripción | NPN Transistor - 2SC3743 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC3743
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q Wide area of safe operation (ASO) with high breakdown voltage
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
900
900
800
7
5
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
13 2
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
50 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
800
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
6
6
Collector to emitter saturation voltage VCE(sat)
IC = 0.8A, IB = 0.16A
0.6 V
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VBE(sat)
fT
ton
tstg
tf
IC = 0.8A, IB = 0.16A
VCE = 5V, IC = 0.1A, f = 1MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
1.2 V
4 MHz
1.0 µs
4.0 µs
1.0 µs
1
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet C3743.PDF ] | |
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