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부품번호 | IRF630 기능 |
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기능 | 200V/9A POWER MOSFET | ||
제조업체 | TAITRON | ||
로고 | |||
전체 10 페이지수
200V/9A POWER MOSFET
(N-Channel)
IRF630/IRFS630
200V/9A Power MOSFET (N-Channel)
General Description
• IRF630/IRFS630 are N-Channel enhancement mode power MOSFETs with
advanced technology. These power MOSFETs are designed for low voltage,
high speed power switching applications such as switching regulators, converters,
solenoid and relay drivers.
TO-220
• IRF630/IRFS630 are available in TO-220/TO-220F packages.
TO-220F
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast switching capability
• Ease of Paralleling
• Simple Drive Requirements
• RoHS Compliance and Halogen free
Application
• DC to DC Converter
• Adapter
• SMPS Application.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITF AX (800)-824-8329 (661)-257-6415
Rev. A/LX
Page 1 of 10
http://www.Datasheet4U.com
200V/9A POWER MOSFET (N-Channel)
IRF630/IRFS630
Symbol
Description
SWITCHING CHARACTERISTICS
td(on)
tr
td(off)
tf
Qg
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Min. Typ. Max.
Unit
- 9.4 -
- 28 -
- 39 -
nS
- 20 -
- - 43
- - 7 nC
- - 23
Ld Internal Drain inductance
Ls Internal Drain inductance
- 4.5 -
- 7.5 -
nH
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Drain-Source Diode Forward Voltage - -
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward turn-on time (Note5)
- 170
- 1.1
-*
2
340
2.2
-
V
nS
uC
-
Note
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L=4.6mH, IAS=9A, VDD=50V, RG=25Ω, Starting TJ=25°C
3: Isd≤9A, di/dt≤120A/us, VDD≤VBR(DSS), Starting TJ=25°C
4: Pulse test: Pulse width ≤300us, Duty cycle≤2%
5: *Negligible, Dominated by circuit inductance
Conditions
VDD =100V, ID=5.9A,
RG=12Ω, RD=16Ω
(Note 4)
VDS =160V, ID=5.9A,
VGS =10V
(Note 4)
measured from the drain
lead 0.25” from package
to center of die
measured from the drain
lead 0.25” from package
to source bond pad
VGS =0V, Is=9A
(Note 4)
VGS =0V, IF=5.9A
di/dt=100A/us (Note4)
www.taitroncomponents.com
Rev. A/LX
Page 4 of 10
4페이지 200V/9A POWER MOSFET (N-Channel)
IRF630/IRFS630
Fig.8- Max. Safe Operation Area
(TO-220)
Fig.9- Max. Safe Operation Area
(TO-220F)
Drain-Source Voltage VDS (V)
Fig.10- Transient Thermal Response
(TO-220)
Drain-Source Voltage VDS (V)
Fig.11- Transient Thermal Response
(TO-220F)
Time (mS)
www.taitroncomponents.com
Time (mS)
Rev. A/LX
Page 7 of 10
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ IRF630.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRF630 | 200V/9A POWER MOSFET | TAITRON |
IRF630 | N-channel TrenchMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |