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Número de pieza | MTN6515E3 | |
Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTN6515E3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C739E3
Issued Date : 2009.10.19
Revised Date : 2010.10.18
Page No. : 1/6
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN6515E3
BVDSS
ID
150V
20A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating
RDSON(MAX)
65mΩ
Equivalent Circuit
MTN6515E3
Outline
TO-220
G:Gate
D:Drain
S:Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
MTTN6515E3
Limits
150
±16
20
15
80
20
5
2.5
110
55
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification
http://www.Datasheet4U.com
1 page CYStech Electronics Corp.
Spec. No. : C739E3
Issued Date : 2009.10.19
Revised Date : 2010.10.18
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTTN6515E3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet MTN6515E3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTN6515E3 | N-Channel Logic Level Enhancement Mode Power MOSFET | CYStech Electronics |
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