|
|
PDF MTN6515J3 Data sheet ( Hoja de datos )
| Número de pieza | MTN6515J3 | |
| Descripción | N-Channel Logic Level Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTN6515J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2013.12.25
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTN6515J3
BVDSS 150V
ID
RDS(ON)@VGS=10V, ID=15A
RDS(ON)@VGS=5V, ID=10A
RDS(ON)@VGS=3V, ID=3A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
20A
60mΩ(typ)
59mΩ(typ)
60mΩ(typ)
Equivalent Circuit
MTN6515J3
Outline
TO-252(DPAK)
G：Gate D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Sy
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
mbol
VDS 150
VGS
ID 20
ID 14
IDM 60
IAS 20
EAS 5
EAR 2.5
Pd
Tj, Tstg
Limits
±16
60
30
-55~+175
Unit
V
A
mJ
W
°C
MTN6515J3
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : C739J3
Issued Date : 2009.10.19
Revised Date : 2013.12.25
Page No. : 5/9
Typical Characteristics (Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1000
100
C oss
Crss
1
0.8
0.6
10
0.1
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
0.4
-60
10
8
-20 20
60 100
Tj, Junction Temperature(°C)
140
Gate Charge Characteristics
VDS=80V
VDS=50V
1
0.1
0.01
0.001
VDS=10
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
6
4
2 ID=10A
0
0 10 20 30 40 50
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
DC
Maximum Drain Current vs Case Temperature
25
20
15
10
0.1 TC=25°C, Tj=175°C
VGS=10V, θJC=2.5°C/W
Single Pulse
0.01
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
5
VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTN6515J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTN6515J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTN6515J3 | N-Channel Logic Level Enhancement Mode Power MOSFET | CYStech Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |