|
|
|
부품번호 | MTNN8451KQ8 기능 |
|
|
기능 | Asymmetric Dual N-Channel Enhancement Mode MOSFET | ||
제조업체 | CYStech Electronics | ||
로고 | |||
CYStech Electronics Corp.
Spec. No. : C558Q8
Issued Date : 2012.04.28
Revised Date : 2012.04.30
Page No. : 1/12
Asymmetric Dual N-Channel Enhancement Mode MOSFET
MTNN8451KQ8 BVDSS
ID
RDSON(TYP.)@VGS=10V
RDSON(TYP.)@VGS=4.5V
FET1
30V
6.8A
15mΩ
23mΩ
FET 2
30V
10.2A
11mΩ
18mΩ
Description
The MTNN8451KQ8 uses advanced trench technology to provide excellent RDS(on) and low gate charge.
The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use
in DC-DC converters. A Schottky diode in parallel with the synchronous MOSFET to boost efficiency
further.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
MTNN8451KQ8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTNN8451KQ8
CYStek Product Specification
http://www.Datasheet4U.com
CYStech Electronics Corp.
Spec. No. : C558Q8
Issued Date : 2012.04.28
Revised Date : 2012.04.30
Page No. : 4/12
Typical Characteristics : FET 1
Typical Output Characteristics
30
25 10V, 9V, 8V, 7V, 6V, 5V
20 4V
15
10
VGS=2V
VGS=3V
5
0
0 1 23 4 5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
VGS=2.5V
VGS=3V
100 VGS=4.5V
10 VGS=10V
1
0.01
0.1 1 10
ID, Drain Current(A)
100
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6 Tj=150°C
0.4
0.2
04
8 12 16
IDR, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
ID=6A
160
140
120
100
80
60
40
20
0
02
4 68
VGS, Gate-Source Voltage(V)
10
Drain-Source On-State Resistance vs Junction Tempearture
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-60
VGS=10V, ID=6A
-20 20
60 100 140
Tj, Junction Temperature(°C)
180
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
10
0.1
C oss
Crss
1 10
VDS, Drain-Source Voltage(V)
100
MTNN8451KQ8
CYStek Product Specification
4페이지 CYStech Electronics Corp.
Spec. No. : C558Q8
Issued Date : 2012.04.28
Revised Date : 2012.04.30
Page No. : 7/12
Typical Characteristics(Cont.) : FET 2
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1 Pulsed
Ta=25°C
Gate Charge Characteristics
10
VDS=12V
8 VDS=15V
VDS=24V
6
4
2 ID=9A
0.01
0.001
0.01 0.1
1
10
ID, Drain Current(A)
100
0
02 468
10 12 14
Qg, Total Gate Charge(nC)
100
RDSON
Limite
10
1
Maximum Safe Operating Area
100μs
1ms
10ms
100ms
1s
0.1 TA=25°C, Tj=150°C
VGS=10V, θJA=62.5°C/W
Single Pulse
DC
0.01
0.1 1
10
VDS, Drain-Source Voltage(V)
100
Maximum Drain Current vs Case Temperature
12
10
8
6
4 TA=25°C
VGS=10V
2 RθJA=62.5°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1
D=0.5
Transient Thermal Response Curves
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.001
1.E-04
MTNN8451KQ8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ MTNN8451KQ8.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
MTNN8451KQ8 | Asymmetric Dual N-Channel Enhancement Mode MOSFET | CYStech Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |