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Número de pieza | MTP1406L3 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTP1406L3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2012.03.09
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTP1406L3
BVDSS
ID
RDSON@VGS=-10V, ID=-4A
Features
• Simple Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
RDSON@VGS=-10V, ID=-1.5A
RDSON@VGS=-4.5V, ID=-2A
-60V
-4.8A
75mΩ (typ.)
74mΩ (typ.)
99mΩ (typ.)
Symbol
MTP1406L3
Outline
SOT-223
D
G:Gate
D:Drain
S:Source
S
D
G
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS -60 V
Gate-Source Voltage
VGS ±20 V
Continuous Drain Current @ TA=25°C
ID
-4.8 *1
A
Continuous Drain Current @ TA=70°C
ID
-3.8 *1
A
Pulsed Drain Current
IDM
-20 *1
A
Total Power Dissipation (TA=25℃)
Pd
2.7 *2
W
Linear Derating Factor
0.02 W/°C
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board; 120°C/W when mounted on minimum copper pad
MTP1406L3
CYStek Product Specification
http://www.Datasheet4U.com
1 page CYStech Electronics Corp.
Spec. No. : C733L3
Issued Date : 2012.02.14
Revised Date : 2012.03.09
Page No. : 5/8
Typical Characteristics(Cont.)
Power Derating Curve
4
Forward Transfer Admittance vs Drain Current
10
VDS=-5V
3
1 VDS=-10V
2
1
0
0
200
20 40 60 80 100 120 140 160
TA, Ambient Temperature(℃)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
TJ(MAX)=150°C
150 TA=25°C
θJA=45°C/W
100
50
0
0.000 1
0.001
1
0.01 0.1 1 10
Pulse Width(s)
Transient Thermal Response Curves
D=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1.E-04
MTP1406L3
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=120°C/W
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTP1406L3.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTP1406L3 | P-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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